In this study, we report the epitaxial growth of a series of {alpha}-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the {alpha}-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of {alpha}-Sn films on the electrical transport properties.
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