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Register a new userRotating edge-field driven processing of chiral spin textures in racetrack devices
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Added by
Alexander F. Sch\\\"affer
Publication date
2020
fields
Physics
and research's language is
English
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Topologically distinct magnetic structures like skyrmions, domain walls, and the uniformly magnetized state have multiple applications in logic devices, sensors, and as bits of information. One of the most promising concepts for applying these bits is the racetrack architecture controlled by electric currents or magnetic driving fields. In state-of-the-art racetracks, these fields or currents are applied to the whole circuit. Here, we employ micromagnetic and atomistic simulations to establish a concept for racetrack memories free of global driving forces. Surprisingly, we realize that mixed sequences of topologically distinct objects can be created and propagated over far distances exclusively by local rotation of magnetization at the sample boundaries. We reveal the dependence between the chirality of the rotation and the direction of propagation and define the phase space where the proposed procedure can be realized. The advantages of this approach are the exclusion of high current and field densities as well as its compatibility with an energy-efficient three-dimensional design.
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Controllable artificial pinning is indispensable in numerous domain-wall (DW) devices, such as memory, sensor, logic gate, and neuromorphic computing hardware. The high-accuracy determination of the effective spring constant of the pinning potential, however, remains challenging, because the extrinsic pinning is often mixed up with intrinsic ones caused by materials defects and randomness. Here, we study the collective dynamics of interacting DWs in a racetrack with pinning sites of alternate distances. By mapping the governing equations of DW motion to the Su-Schrieffer-Heeger model and evaluating the quantized Zak phase, we predict two topologically distinct phases in the racetrack. Robust edge state emerges at either one or both ends depending on the parity of the DW number and the ratio of alternating intersite lengths. We show that the in-gap DW oscillation frequency has a fixed value which depends only on the geometrical shape of the pinning notch, and is insensitive to device imperfections and inhomogeneities. We propose to accurately quantify the spring coefficient that equals the square of the robust DW frequency multiplied by its constant mass. Our findings suggest as well that the DW racetrack is an ideal platform to study the topological phase transition.
We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.
Spin polarized scanning tunneling microscopy is used to directly image topological magnetic textures in thin films of MnGe, and to correlate the magnetism with structure probed at the atomic-scale. Our images indicate helical stripe domains, each characterized by a single wavevector Q, and their associated helimagnetic domain walls, in contrast to the 3Q magnetic state seen in the bulk. Combining our surface measurements with micromagnetic modeling, we deduce the three-dimensional orientation of the helical wavevectors and gain detailed understanding of the structure of individual domain walls and their intersections. We find that three helical domains meet in two distinct ways to produce either a target-like or a pi-like topological spin texture, and correlate these with local strain on the surface. We further show that the target-like texture can be reversibly manipulated through either current/voltage pulsing or applied magnetic field, a promising step toward future applications.
Theory of interference-induced quantum corrections to conductivity is developed for two dimensional systems with chiral spin textures including skyrmions. The effect of exchange interaction between electrons and spin textures on weak localization of electronic waves is studied. The spin dephasing rates are calculated as functions of the spin texture size. The anomalous magnetoresistance is shown to be governed by the size and magnetization spatial distribution of the spin textures. The effect of average magnetization-induced spin splitting on weak localization is analyzed. The sign-alternating weak-antilocalization magnetoresistance is demonstrated for skyrmion crystals. We argue that analysis of the low-field magnetoresistance serves as an independent tool for an experimental detection of chiral spin textures and, in particular, skyrmions.
Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase diagram of bilayer graphene has spurred interest into whether it stems from disorder or from fundamental interactions such as correlations. Here, we report an effective new way to access electron-hole asymmetry in 2D materials by directly measuring the quasiparticle self-energy in graphene/Boron Nitride field effect devices. As the chemical potential moves from the hole to the electron doped side, we see an increased strength of electronic correlations manifested by an increase in the band velocity and inverse quasiparticle lifetime. These results suggest that electronic correlations play an intrinsic role in driving electron hole asymmetry in graphene and provide a new insight for asymmetries in more strongly correlated materials.
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