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Second-order topological insulators (SOTIs) are the topological phases of matter in d dimensions that manifest (d-2)-dimensional localized modes at the intersection of the edges. We show that SOTIs can be designed via stacked Chern insulators with opposite chiralities connected by interlayer coupling. To characterize the bulk-corner correspondence, we establish a Jacobian-transformed nested Wilson loop method and an edge theory that are applicable to a wider class of higher-order topological systems. The corresponding topological invariant admits a filling anomaly of the corner modes with fractional charges. The system manifests a fragile topological phase characterized by the absence of a Wannier gap in the Wilson loop spectrum. Furthermore, we argue that the proposed approach can be generalized to multilayers. Our work offers perspectives for exploring and understanding higher-order topological phenomena.
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A second-order topological insulator (SOTI) in $d$ spatial dimensions features topologically protected gapless states at its $(d-2)$-dimensional boundary at the intersection of two crystal faces, but is gapped otherwise. As a novel topological state, it has been attracting great interest, but it remains a challenge to identify a realistic SOTI material in two dimensions (2D). Here, based on combined first-principles calculations and theoretical analysis, we reveal the already experimentally synthesized 2D material graphdiyne as the first realistic example of a 2D SOTI, with topologically protected 0D corner states. The role of crystalline symmetry, the robustness against symmetry-breaking, and the possible experimental characterization are discussed. Our results uncover a hidden topological character of graphdiyne and promote it as a concrete material platform for exploring the intriguing physics of higher-order topological phases.
We study the topological phase in dipolar-coupled two-dimensional breathing square lattice of magnetic vortices. By evaluating the quantized Chern number and $mathbb{Z}_{4}$ Berry phase, we obtain the phase diagram and identify that the second-order topological corner states appear only when the ratio of alternating bond lengths goes beyond a critical value. Interestingly, we uncover three corner states at different frequencies ranging from sub GHz to tens of GHz by solving the generalized Thieles equation, which has no counterpart in condensed matter system. We show that the emerging corner states are topologically protected by a generalized chiral symmetry of the quadripartite lattice, leading to particular robustness against disorder and defects. Full micromagnetic simulations confirm theoretical predictions with a great agreement. A vortex-based imaging device is designed as a demonstration of the real-world application of the second-order magnetic topological insulator. Our findings provide a route for realizing symmetry-protected multi-band corner states that are promising to achieve spintronic higher-order topological devices.
We propose two mechanisms to realize the second order topological insulator (SOTI) state in spinless hexagonal lattices, viz., chemical modification and anti-Kekule/Kekule distortion of hexagonal lattice. Correspondingly, we construct two models and demonstrate the nontrivial band topology of the SOTI state characterized by the second Stiefel-Whitney class $w_2$ in the presence of inversion symmetry ($textit{P}$) and time-reversal symmetry ($textit{T}$). Based on the two mechanisms and using first-principles calculations and symmetry analysis, we predict three categories of real light element material candidates, i.e., hydrogenated and halogenated 2D hexagonal group IV materials XY (X=C, Si, Ge, Sn, Y=H, F, Cl), 2D hexagonal group V materials (blue phosphorene, blue arsenene, and black phosphorene, black arsenene), and the recent experimentally synthesized anti-Kekule/Kekule order graphenes and the counterparts of silicene/germanene/stanene. We explicitly demonstrate the nontrivial topological invariants and existence of the protected corner states with fractional charge for these candidates with giant bulk band gap (up to 3.5 eV), which could facilitate the experimental verification by STM. Our approaches and proposed abundant real material candidates will greatly enrich 2D SOTIs and promote their intriguing physics research.
Recently, a new class of second-order topological insulators (SOTIs) characterized by an electronic dipole has been theoretically introduced and proposed to host topological corner states. As a novel topological state, it has been attracting great interest and experimentally realized in artificial systems of various fields of physics based on multi-sublattice models, e.g., breathing kagome lattice. In order to realize such kind of SOTI in natural materials, we proposed a symmetry-faithful multi-orbital model. Then, we reveal several familiar transition metal dichalcogenide (TMD) monolayers as a material family of two-dimensional SOTI with large bulk gaps. The topologically protected corner state with fractional charge is pinned at Fermi level due to the charge neutrality and filling anomaly. Additionally, we propose that the zero-energy corner state preserves in the heterostructure composed of a topological nontrivial flake embedded in a trivial material. The novel second-order corner states in familiar TMD materials hold promise for revealing unexpected quantum properties and applications.
Dirac and Weyl semimetals both exhibit arc-like surface states. However, whereas the surface Fermi arcs in Weyl semimetals are topological consequences of the Weyl points themselves, the surface Fermi arcs in Dirac semimetals are not directly related to the bulk Dirac points, raising the question of whether there exists a topological bulk-boundary correspondence for Dirac semimetals. In this work, we discover that strong and fragile topological Dirac semimetals exhibit 1D higher-order hinge Fermi arcs (HOFAs) as universal, direct consequences of their bulk 3D Dirac points. To predict HOFAs coexisting with topological surface states in solid-state Dirac semimetals, we introduce and layer a spinful model of an $s-d$-hybridized quadrupole insulator (QI). We develop a rigorous nested Jackiw-Rebbi formulation of QIs and HOFA states. Employing $ab initio$ calculations, we demonstrate HOFAs in both the room- ($alpha$) and intermediate-temperature ($alpha$) phases of Cd$_{3}$As$_2$, KMgBi, and rutile-structure ($beta$-) PtO$_2$.
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