Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userIII-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
187
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emitting diode nanowires.
rate research
Read More
We report on the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emission in the UV wavelength range. During the epitaxial growth of AlInN layer, an AlInN shell is spontaneously formed, resulted in the reduced nonradiative recombination on nanowire surface. The AlInN nanowires exhibit high internal quantum efficiency of ~ 52% at room temperature for emission at 295nm. The peak emission wavelength can be varied from 290 nm to 355 nm by changing the growth condition. Moreover, significantly strong transverse magnetic (TM) polarized emission is recorded which is ~ 4 times stronger compared to the transverse electric (TE) polarized light at 295 nm. This study provides alternative approach for the fabrication of new type of high-performance ultraviolet light-emitters.
Short wavelength ultraviolet (UV-C) light deactivates DNA of any germs, including multiresistive bacteria and viruses like COVID-19. Two-dimensional (2D) material-based UV-C light emitting diodes can potentially be integrated into arbitrary surfaces to allow for shadow-free surface disinfection. In this work, we perform a series of first-principles calculations to identify the core components of ultrathin LEDs based on hexagonal boron nitride (hBN). The electrons and holes are predicted to be confined in multiple quantum wells (MQWs) by combining hBN layers with different stacking orders. Various p- and n-doping candidates for hBN are assessed, and the relative p- and n-type metal contacts with low Schottky barrier heights are identified. The findings are summarized in a concrete UV-C LED structure proposal.
We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using APSYS software and compared with simulated AlGaN nanowire DUV LEDs. From the simulation results, significant efficiency droop was observed in AlGaN based devices, attributed to the significant electron leakage. However, compared to AlGaN nanowire DUV LEDs at similar emission wavelength, the proposed single quantum well (SQW) AlInN based light-emitters offer higher internal quantum efficiency without droop up to current density of 1500 A/cm2 and high output optical power. Moreover, we find that transverse magnetic polarized emission is ~ 5 orders stronger than transverse electric polarized emission at 238 nm wavelength. Further research shows that the performance of the AlInN DUV nanowire LEDs decreases with multiple QWs in the active region due to the presence of the non-uniform carrier distribution in the active region. This study provides important insights on the design of new type of high performance AlInN nanowire DUV LEDs, by replacing currently used AlGaN semiconductors.
Solution-processed planar perovskite light-emitting diodes (LEDs) promise high-performance and cost-effective electroluminescent (EL) devices ideal for large-area display and lighting applications. Exploiting emission layers with high ratios of horizontal transition dipole moments (TDMs) is expected to boost photon outcoupling of planar LEDs. However, LEDs based on anisotropic perovskite nanoemitters remains to be inefficient (external quantum efficiency, EQE <5%), due to the difficulties of simultaneously controlling the orientations of TDMs, achieving high photoluminescence quantum yields (PLQYs) and realizing charge balance in the films of the assembled nanostructures. Here we demonstrate efficient EL from an in-situ grown continuous perovskite film comprising of a monolayer of face-on oriented nanoplatelets. The ratio of horizontal TDMs of the perovskite nanoplatelet films is ~84%, substantially higher than that of isotropic emitters (67%). The nanoplatelet film shows a high PLQY of ~75%. These merits enable LEDs with a peak EQE of 23.6%, representing the most efficient perovskite LEDs.
We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $mu$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED coupled to eleven SNSPDs in a single integrated photonic device. Such on-chip optical links may be useful for quantum information or neuromorphic computing applications.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
