No Arabic abstract
Flat-band systems are a promising platform for realizing exotic collective ground states with spontaneously broken symmetry because the electron-electron interactions dominate the kinetic energy. A state of particular interest would be the chased after interlayer-phase-coherent exciton condensate but the conventional treatments of the effect of thermal and quantum fluctuations suggest that this state might be either unstable or fragile. In this work, using double twisted bilayer graphene heterostructures as an example, we show that the quantum metric of the Bloch wave functions can strongly stabilize the exciton condensate and reverse the conclusion that one would draw using a conventional approach. The quantum metric contribution arises from interband terms, and flat-bands are most commonly realized by engineering multiband systems. Our results therefore suggest that in many practical situations the quantum metric can play a critical role in determining the stability of exciton condensates in double layers formed by two-dimensional systems with flat-bands.
We show that the recently observed superconductivity in twisted bilayer graphene (TBG) can be explained as a consequence of the Kohn-Luttinger (KL) instability which leads to an effective attraction between electrons with originally repulsive interaction. Usually, the KL instability takes place at extremely low energy scales, but in TBG, a doubling and subsequent strong coupling of the van Hove singularities (vHS) in the electronic spectrum occurs as the magic angle is approached, leading to extended saddle points in the highest valence band (VB) with almost perfect nesting between states belonging to different valleys. The highly anisotropic screening induces an effective attraction in a $p$-wave channel with odd parity under the exchange of the two disjoined patches of the Fermi line. We also predict the appearance of a spin-density wave (SDW) instability, adjacent to the superconducting phase, and the opening of a gap in the electronic spectrum from the condensation of spins with wave vector corresponding to the nesting vector close to the vHS.
Flatbands with extremely narrow bandwidths on the order of a few mili-electron volts can appear in twisted multilayer graphene systems for appropriate system parameters. Here we investigate the electronic structure of a twisted bi-bilayer graphene, or twisted double bilayer graphene, to find the parameter space where isolated flatbands can emerge as a function of twist angle, vertical pressure, and interlayer potential differences. We find that in twisted bi-bilayer graphene the bandwidth is generally flatter than in twisted bilayer graphene by roughly up to a factor of two in the same parameter space of twist angle $theta$ and interlayer coupling $omega$, making it in principle simpler to tailor narrow bandwidth flatbands. Application of vertical pressure can enhance the first magic angle in minimal models at $theta sim 1.05^{circ}$ to larger values of up to $theta sim 1.5^{circ}$ when $ P sim 2.5$~GPa, where $theta propto omega/ upsilon_{F}$. Narrow bandwidths are expected in bi-bilayers for a continuous range of small twist angles, i.e. without magic angles, when intrinsic bilayer gaps open by electric fields, or due to remote hopping terms. We find that moderate vertical electric fields can contribute in lifting the degeneracy of the low energy flatbands by enhancing the primary gap near the Dirac point and the secondary gap with the higher energy bands. Distinct valley Chern bands are expected near $0^{circ}$ or $180^{circ}$ alignments.
When twisted to angles near 1{deg}, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report the discovery of a new member of the family, density-wave states, in double bilayer graphene twisted to 2.37{deg}. At this angle the moire states retain much of their isolated bilayer character, allowing their bilayer projections to be separately controlled by gates. We use this property to generate an energetic overlap between narrow isolated electron and hole bands with good nesting properties. Our measurements reveal the formation of ordered states with reconstructed Fermi surfaces, consistent with density-wave states, for equal electron and hole densities. These states can be tuned without introducing chemical dopants, thus opening the door to a new class of fundamental studies of density-waves and their interplay with superconductivity and other types of order, a central issue in quantum matter physics.
Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns has opened new vistas in the topological materials landscape. Here we report on evidence, obtained by combining thermodynamic measurements, local and non-local transport measurements, and theoretical calculations, that robust topologically non-trivial, valley Chern insulators occur at charge neutrality in twisted double-bilayer graphene (TDBG). These time reversal-conserving valley Chern insulators are enabled by valley-number conservation, a symmetry that emerges from the moire pattern. The thermodynamic gap extracted from chemical potential measurements proves that TDBG is a bulk insulator under transverse electric field, while transport measurements confirm the existence of conducting edge states. A Landauer-Buttiker analysis of measurements on multi-terminal samples allows us to quantitatively assess edge state scattering and demonstrate that it does not destroy the edge states, leaving the bulk-boundary correspondence largely intact.
We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements, quantum oscillations of magnetoresistance originating from two bands with different carrier density were observed. The behavior of the carrier densities with respect to the total carrier density were distinct from that of the AB-stacked tetralayer graphene. The carrier density ratio was theoretically analyzed in terms of the model that the induced charge decays exponentially with distance with a screening length {lambda}. The estimated {lambda} was slightly larger than that of AB-stacked graphene, which would possibly reflect the difference in the inter-plane distribution of probability of the wave function.