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Register a new userCharacterization of single photon sources for radiometry applications at room temperature
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A single photon source with high repeatability and low uncertainties is the key element for few-photon metrology based on photon numbers. While low photon number fluctuations and high repeatability are important figures for qualification as a standard light source, these characteristics are limited in single photon emitters by some malicious phenomena like blinking or internal relaxations to varying degrees in different materials. This study seeks to characterize photon number fluctuations and repeatability for radiometry applications at room temperature. For generality in this study, we collected photon statistics data with various single photon emitters of $g^{(2)}(0) < 1$ at low excitation power and room temperature in three material platforms: silicon vacancy in diamond, defects in GaN, and vacancy in hBN. We found common factors related with the relaxation times of the internal states that indirectly affect photon number stability. We observed a high stability of photon number with defects in GaN due to faster relaxations compared with vacancies in hBN, which on the other hand produced high rates ($> 10^6$) of photons per second. Finally, we demonstrate repeatable radiant flux measurements of a bright hBN single photon emitter for a wide radiant flux range from a few tens of femtowatts to one picowatt.
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On-chip photon sources carrying orbital angular momentum (OAM) are in demand for high-capacity optical information processing in both classical and quantum regimes. However, currently-exploited integrated OAM sources have been primarily limited to the classical regime. Herein, we demonstrate a room-temperature on-chip integrated OAM source that emits well-collimated single photons, with a single-photon purity of g(2)(0) = 0.22, carrying entangled spin and orbital angular momentum states and forming two spatially separated entangled radiation channels with different polarization properties. The OAM-encoded single photons are generated by efficiently outcoupling diverging surface plasmon polaritons excited with a deterministically positioned quantum emitter via Archimedean spiral gratings. Our OAM single-photon sources bridge the gap between conventional OAM manipulation and nonclassical light sources, enabling high-dimensional and large-scale photonic quantum systems for information processing.
Room temperature single-photon sources (SPSs) are critical for the emerging practical quantum applications such as on-chip photonic circuity for quantum communications systems and integrated quantum sensors. However, direct integration of an SPS into on-chip photonic systems remains challenging due to low coupling efficiencies between the SPS and the photonic circuitry that often involve size mismatch and dissimilar materials. Here, we develop an adjoint topology optimization scheme to design high-efficiency couplers between a photonic waveguide and SPS in hexagonal boron nitride (hBN). The algorithm accounts for fabrication constraints and the SPS location uncertainty. First, a library of designs for the different positions of the hBN flake containing an SPS with respect to a Si$_{3}$N$_{4}$ waveguide is generated, demonstrating an average coupling efficiency of 78%. Then, the designs are inspected with dimensionality reduction technique to investigate the relationship between the device geometry (topology) and performance. The fundamental, physics-based intuition gained from this approach could enable the design of high-performance quantum devices
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway towards low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.
A system of N two-level atoms cooperatively interacting with a photonic field can be described as a single giant atom coupled to the field with interaction strength ~N^0.5. This enhancement, known as Dicke cooperativity in quantum optics, has recently become an indispensable element in quantum information technology based on strong light-matter coupling. Here, we extend the coupling beyond the standard light-matter interaction paradigm, emulating Dicke cooperativity in a terahertz metasurface with N meta-atoms. Cooperative enhancement manifested in the form of matter-matter coupling, through the hybridization of localized surface plasmon resonance in individual meta-atoms and surface lattice resonance due to the periodic array of the meta-atoms. By varying the lattice constant of the array, we observe a clear anticrossing behavior, a signature of strong coupling. Furthermore, through engineering of the capacitive split-gap in the meta-atoms, the coupling rate was cooperatively enhanced into the ultrastrong coupling regime by a factor of N^0.5. This room-temperature technology serves as a convenient quantum emulator of the dynamics of a qubit with a giant dipole moment coherently driven by a single bosonic field.
Applications relying on mid-infrared radiation (Mid-IR, $lambdasim$ 3-30 $mu$m) have progressed at a very rapid pace in recent years, stimulated by scientific and technological breakthroughs. Mid-IR cameras have propelled the field of thermal imaging. And the invention of the quantum cascade laser (QCL) has been a milestone, making compact, semiconductor-based mid-IR lasers available to a vast range of applications. All the recent breakthrough advances stemmed from the development of a transformative technology. In addition to the generation and detection of light, a key functionality for most photonics systems is the electrical control of the amplitude and/or phase of an optical beam at ultra-fast rates (GHz or more). However, standalone, broadband, integrated modulators are missing from the toolbox of present mid-IR photonics integrated circuits and systems developers. We have developed a free-space amplitude modulator for mid-IR radiation ($lambdasim$ 10 $mu$m) that can operate up to at least 1.5 GHz (-3dB cut-off at $sim$ 750 MHz) and at room-temperature. The device relies on a semiconductor hetero-structure enclosed in a judiciously designed metal-metal optical resonator. At zero bias, it operates in the strong light-matter coupling regime up to 300K. By applying an appropriate bias, the device transitions to the weak coupling regime. The large change in reflectivity due to the disappearance of the polaritonic states is exploited to modulate the intensity of a mid-IR continuous-wave laser up to speeds of more than 1.5 GHz.
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