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Register a new userResistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
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This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the $n^+$ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between $2.5; mu m$ for 70-100 pad-pitch geometry and $17; mu m$ with 200-500 matrices, a factor of 10 better than what is achievable in binary read-out ($bin; size/ sqrt{12}$). Beam test data show a temporal resolution of $sim 40; ps$ for 200-$mu m$ pitch devices, in line with the best performances of LGAD sensors at the same gain.
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We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGAD-based devices.
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 {mu}m) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.
In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain Avalanche Detectors (LGAD), they benefit from the very good timing performances of such technology together with an unprecedented resolution of the spatial tracking, which allows to reach the micron-level scale in the track reconstruction. This is essentially due to the absence of any segmentation structure between pads (100% fill-factor) and to other two innovative key-features: the first one is a properly doped n+ resistive layer, slowing down the charges just after being multiplied, and the second one is a dielectric layer grown on Silicon, inducing a capacitive coupling on the metal pads deposited on top of the detector. The very good spatial resolution (micron-level) we measured experimentally - higher than the nominal pad pitch - comes from the analogical nature of the readout of signals, whose amplitude attenuates from the pad center to its periphery, while the outstanding results in terms of timing (less than 14 ps, even better than standard LGAD) are due to a combination of very-fine pitch, analogical response and charge multiplication.
We present for the first time, discharge-free operation at cryogenic conditions of a Resistive-Plate WELL (RPWELL) detector. It is a single-sided Thick Gaseous Electron Multiplier (THGEM) coupled to a readout anode via a plate of high bulk resistivity. The results of single- and double-stage RPWELL detectors operated in stable conditions in Ne/5$%$CH$_{4}$ at 163 K are summarized. The RPWELL comprised a ferric-based (Fe$^{3+}$) ceramic composite (Fe-ceramic) as the resistive plate, of volume resistivity $sim$$10^{11}$ $Omega$$cdot$cm at this temperature. Gains of $sim$$10^{4}$ and $sim$$10^{5}$ were reached with the single-stage RPWELL, with 6 keV X-rays and single UV-photons, respectively. The double-stage detector, a THGEM followed by the RPWELL, reached gains $sim$$10^{5}$ and $sim$$10^{6}$ with X-rays and single UV-photons, respectively. The results were obtained with and without a CsI photocathode on the first multiplying element. Potential applications at these cryogenic conditions are discussed.
NEXT-DEMO is a high-pressure xenon gas TPC which acts as a technological test-bed and demonstrator for the NEXT-100 neutrinoless double beta decay experiment. In its current configuration the apparatus fully implements the NEXT-100 design concept. This is an asymmetric TPC, with an energy plane made of photomultipliers and a tracking plane made of silicon photomultipliers (SiPM) coated with TPB. The detector in this new configuration has been used to reconstruct the characteristic signature of electrons in dense gas. Demonstrating the ability to identify the MIP and blob regions. Moreover, the SiPM tracking plane allows for the definition of a large fiducial region in which an excellent energy resolution of 1.82% FWHM at 511 keV has been measured (a value which extrapolates to 0.83% at the xenon Qbetabeta).
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