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Register a new userInfluence of Yb3+on the structural, electrical and optical properties of sol-gel synthesized Ni-Zn nanoferrites
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Polycrystalline Yb substituted NiZn nanoferrites with the compositions of Ni0.5Zn0.5YbxFe2-xO4 (x= 0.00, 0.04, 0.08, 0.12, 0.16 and 0.20) have been synthesized using sol gel auto combustion technique. Single phase cubic spinel structure has been confirmed by the X ray diffraction (XRD) patterns. Larger lattice constants of the compositions are found with increasing Yb3+ concentration while the average grain size (52 to 18 nm) has noticeable decrease as Yb3+ content is increased. The presence of all existing elements as well as the purity of the samples has also been confirmed from energy dispersive X ray spectroscopic (EDS) analysis. Frequency dependent dielectric constant, dielectric loss, dielectric relaxation time, AC and DC resistivity of the compositions have also been examined at room temperature. The DC resistivity value is found in the order of 10 to power 10 (omega-cm) which is at least four orders greater than the ferrites prepared by conventional method. This larger value of resistivity attributes due to very small grain size and successfully explained using the Verwey and deBoer hopping conduction model. The contribution of grain and grain boundary resistance has been elucidated using Cole Cole plot. The study of temperature dependent DC resistivity confirms the semiconducting nature of all titled compositions wherein bandgap (optical) increases from 2.73 eV to 3.25 eV with the increase of Yb content. The high value of resistivity is of notable achievement for the compositions that make them a potential candidate for implication in the high frequency applications where reduction of eddy current loss is highly required.
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We have investigated the Vanadium- (V) substituted Ni-Zn-Co ferrites where the samples were prepared using solid-state reaction technique. The impact of V5+ substitution on the structural, magnetic, dielectric and electrical properties of Ni-Zn-Co ferrites has been studied. XRD analysis confirmed the formation of a single-phase cubic spinel structure. The lattice constants have been calculated both theoretically and experimentally along with other structural parameters such as bulk density, X-ray density and porosity. The FESEM images are taken to study the surface morphology. FTIR measurement is also performed which confirms spinel structure formation. The saturation magnetization (Ms), coercive field (Hc) and Bohr magneton (B) were calculated from the obtained M-H loops. The temperature dependent permeability is studied to obtain the Curie temperature. Frequency and composition dependence of permeability was also analyzed. Dielectric behavior and ac resistivity are also subjected to investigate the frequency dependency. An inverse relationship was observed between the composition dependence of dielectric constant and ac resistivity. The obtained results such as the electrical resistivity, dielectric constants and magnetic properties suggest the appropriateness of the studied ferrites in microwave device applications.
The evolution of viscoelastic properties near the sol-gel transition is studied by performing oscillatory rheological measurements on two different types of systems: a colloidal dispersion and a thermo-responsive polymer solution under isothermal and non-isothermal conditions. While undergoing sol-gel transition, both the systems pass through a critical point. An approach to the critical point is characterized in terms of divergence of zero shear viscosity and the subsequent appearance of the low frequency modulus. In the vicinity of the critical gel state, both the viscosity and the modulus show a power-law dependence on relative distance from the critical point. Interestingly, the longest relaxation time has been observed to diverge symmetrically on both the sides of the critical point and also shows a power-law dependence on relative distance from the critical point. The critical (power-law) exponents of the zero-shear viscosity and modulus are observed to be related to the exponents of the longest relaxation time by the hyper scaling laws. The dynamic critical exponent has also been calculated from the growth of the dynamic moduli. Remarkably, the critical relaxation exponent and dynamic critical exponent predicted from the scaling laws precisely agree with the experimental values from the isothermal as well as non-isothermal experiments. The associated critical exponents show remarkable internal consistency and universality for different kinds of systems undergoing the sol-gel transition.
In pursue of a systematic characterization of rare-earth vanadates under compression, in this work we present a multifaceted study of the phase behavior of zircon-type orthovanadate PrVO$_4$ under high pressure conditions, up until 24 GPa. We have found that PrVO$_4$ undergoes a zircon to monazite transition at around 6 GPa, confirming previous results found by Raman experiments. A second transition takes place above 14 GPa, to a BaWO$_4$-I--type structure. The zircon to monazite structural sequence is an irreversible first-order transition, accompanied by a volume collapse of about 9.6%. Monazite phase is thus a metastable polymorph of PrVO$_4$. The monazite-BaWO$_4$-II transition is found to be reversible instead and occurs with a similar volume change. Here we report and discuss the axial and bulk compressibility of all phases. We also compare our results with those for other rare-earth orthovanadates. Finally, by means of optical-absorption experiments and resistivity measurements we determined the effect of pressure on the electronic properties of PrVO$_4$. We found that the zircon-monazite transition produces a collapse of the band gap and an abrupt decrease of the resistivity. The physical reasons for this behavior are discussed. Density-functional-theory simulations support our conclusions.
High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films annealed at various temperatures. By means of X-ray photoelectron spectroscopy and absorption spectrum, it is found that the conduction-band-minimum shifts downward and the valence-band-maximum shifts upward with the increase of annealing temperature, leading to the narrowed band gap. Electrical resistance measurements confirmed a semiconductor-like behavior for all the thin films. Two charge transport mechanisms, i.e., the thermally-activated transport mechanism at high temperatures and the activation-less transport mechanism at low temperatures, are identified by a self-consistent analysis method. These findings provide a critical insight into the electronic band structure and charge transport behavior of Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, validating it as a compelling high-entropy oxide material for future electronic/energy-related technologies.
Rare earth doped crystals are promising systems for quantum information processing. In particular paramagnetic rare earths could be used to build coherent interfaces with optical and microwave photons. In addition, isotopes with non zero nuclear spins could provide long lived states for quantum state storage and processing. Yb3+ is particularly interesting in this respect since it is the only paramagnetic rare earth with a spin 1/2 isotope, which corresponds to the simplest possible level structure. In this paper, we report on the optical and magnetic properties of Yb3+ in the two sites of Y2SiO5, a commonly used crystal for quantum applications. We measured optical inhomogeneous linewidths, peak absorption coefficients, oscillator strengths, excited state lifetimes and fuorescence branching ratios. The Zeeman tensors were also determined in the ground and excited states, as well as the ground state hyperfine tensor for the 171Yb3+ (I = 1=2) isotope. These results suggest that Yb3+:Y2SiO5 is a promising material for applications like solid state optical and microwave quantum memories.
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