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Register a new userHeterostructure design to achieve high quality, high density GaAs 2D electron system with $g$-factor tending to zero
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Added by
Edwin Yoonjang Chung
Publication date
2020
fields
Physics
and research's language is
English
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Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Lande $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value $gsimeq-0.44$ to zero and even to positive values under a sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-electron interaction in a system with $g=0$, studies are quite limited because the GaAs 2DES density decreases significantly with increasing hydrostatic pressure. Here we show that a simple model, based on pressure-dependent changes in the conduction band alignment, quantitatively explains this commonly observed trend. Furthermore, we demonstrate that the decrease in the 2DES density can be suppressed by more than a factor of 3 through an innovative heterostructure design.
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Ultralight mechanical resonators based on low-dimensional materials are well suited as exceptional transducers of minuscule forces or mass changes. However, the low dimensionality also provides a challenge to minimize resistive losses and heating. Here, we report on a novel approach that aims to combine different 2D materials to tackle this challenge. We fabricated a heterostructure mechanical resonator consisting of few layers of niobium diselenide (NbSe$_2$) encapsulated by two graphene sheets. The hybrid membrane shows high quality factors up to 245000 at low temperatures, comparable to the best few-layer graphene mechanical resonators. In contrast to few-layer graphene resonators, the device shows reduced electrical losses attributed to the lower resistivity of the NbSe$_2$ layer. The peculiar low temperature dependence of the intrinsic quality factor points to dissipation over two-level systems which in turn relax over the electronic system. Our high sensitivity readout is enabled by coupling the membrane to a superconducting cavity which allows for the integration of the hybrid mechanical resonator as a sensitive and low loss transducer in future quantum circuits.
We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B textbf{44}, 3793) for determination of quantum lifetime substantially underestimates $tau_q$ unless density inhomogeneity is explicitly considered; 2) $tau_q$ does not correlate well with quality as measured by $Delta_{5/2}$, the excitation gap of the fractional quantum Hall state at 5/2 filling.
We have observed the transversal vibration mode of suspended carbon nanotubes at millikelvin temperatures by measuring the single-electron tunneling current. The suspended nanotubes are actuated contact-free by the radio frequency electric field of a nearby antenna; the mechanical resonance is detected in the time-averaged current through the nanotube. Sharp, gate-tuneable resonances due to the bending mode of the nanotube are observed, combining resonance frequencies of up to u_0 = 350 MHz with quality factors above Q = 10^5, much higher than previously reported results on suspended carbon nanotube resonators. The measured magnitude and temperature dependence of the Q-factor shows a remarkable agreement with the intrinsic damping predicted for a suspended carbon nanotube. By adjusting the RF power on the antenna, we find that the nanotube resonator can easily be driven into the non-linear regime.
Resonance properties of nanomechanical resonators based on doubly clamped silicon nanowires, fabricated from silicon-on-insulator and coated with a thin layer of aluminum, were experimentally investigated. Resonance frequencies of the fundamental mode were measured at a temperature of $20,mathrm{mK}$ for nanowires of various sizes using the magnetomotive scheme. The measured values of the resonance frequency agree with the estimates obtained from the Euler-Bernoulli theory. The measured internal quality factor of the $5,mathrm{mu m}$-long resonator, $3.62times10^4$, exceeds the corresponding values of similar resonators investigated at higher temperatures. The structures presented can be used as mass sensors with an expected sensitivity $sim 6 times 10^{-20},mathrm{g},mathrm{Hz}^{-1/2}$.
Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra-high mobility of $44times10^6$ cm$^2$/Vs at an electron density of $2.0times10^{11}$ /cm$^2$. These results imply only 1 residual impurity for every $10^{10}$ Ga/As atoms. The impact of such low impurity concentration is manifold. Robust stripe/bubble phases are observed, and several new fractional quantum Hall states emerge. Furthermore, the activation gap of the $ u=5/2$ state, which is widely believed to be non-Abelian and of potential use for topological quantum computing, reaches $Deltasimeq820$ mK. We expect that our results will stimulate further research on interaction-driven physics in a two-dimensional setting and significantly advance the field.
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