Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userMagnetic field dependent equilibration of fractional quantum Hall edge modes
85
0
0.0
(
0
)
Added by
Biswajit Karmakar Dr.
Publication date
2020
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Fractional conductance is measured by partitioning $ u = 1$ edge state using gate-tunable fractional quantum Hall (FQH) liquids of filling 1/3 or 2/3 for current injection and detection. We observe two sets of FQH plateaus 1/9, 2/9, 4/9 and 1/6, 1/3, 2/3 at low and high magnetic field ends of the $ u = 1$ plateau respectively. The findings are explained by magnetic field dependent equilibration of three FQH edge modes with conductance $e^2/3h$ arising from edge reconstruction. The results reveal remarkable enhancement of the equilibration lengths of the FQH edge modes with increasing field.
rate research
Read More
Conductance of the edge modes as well as conductance across the co-propagating edge modes around the u = 4/3, 5/3 and 2 quantum Hall states are measured by individually exciting the modes. Temperature dependent equilibration rates of the outer unity conductance edge mode are presented for different filling fractions. We find that the equilibration rate of the outer unity conductance mode at u = 2 is higher and more temperature sensitive compared to the mode at fractional filling 5/3 and 4/3. At lowest temperature, equilibration length of the outer unity conductance mode tends to saturate with lowering filling fraction u by increasing magnetic field B. We speculate this saturating nature of equilibration length is arising from an interplay of Coulomb correlation and spin orthogonality.
We study electron transport through a multichannel fractional quantum Hall edge in the presence of both interchannel interaction and random tunneling between channels, with emphasis on the role of contacts. The prime example in our discussion is the edge at filling factor 2/3 with two counterpropagating channels. Having established a general framework to describe contacts to a multichannel edge as thermal reservoirs, we particularly focus on the line-junction model for the contacts and investigate incoherent charge transport for an arbitrary strength of interchannel interaction beneath the contacts and, possibly different, outside them. We show that the conductance does not explicitly depend on the interaction strength either in or outside the contact regions (implicitly, it only depends through renormalization of the tunneling rates). Rather, a long line-junction contact is characterized by a single parameter which defines the modes that are at thermal equilibrium with the contact and is determined by the interplay of various types of scattering beneath the contact. This parameter -- playing the role of an effective interaction strength within an idealized model of thermal reservoirs -- is generically nonzero and affects the conductance. We formulate a framework of fractionalization-renormalized tunneling to describe the effect of disorder on transport in the presence of interchannel interaction. Within this framework, we give a detailed discussion of charge equilibration for arbitrarily strong interaction in the bulk of the edge and arbitrary effective interaction characterizing the line-junction contacts.
Since the charged mode is much faster than the neutral modes on quantum Hall edges at large filling factors, the edge may remain out of equilibrium in thermal conductance experiments. This sheds light on the observed imperfect quantization of the thermal Hall conductance at $ u=8/3$ and can increase the observed thermal conductance by two quanta at $ u=8/5$. Under certain unlikely but not impossible assumptions, this might also reconcile the observed thermal conductance at $ u=5/2$ with not only the PH-Pfaffian order but also the anti-Pfaffian order.
Charge equilibration between quantum-Hall edge states can be studied to reveal geometric structure of edge channels not only in the integer quantum Hall (IQH) regime but also in the fractional quantum Hall (FQH) regime particularly for hole-conjugate states. Here we report on a systematic study of charge equilibration in both IQH and FQH regimes by using a generalized Hall bar, in which a quantum Hall state is nested in another quantum Hall state with different Landau filling factors. This provides a feasible way to evaluate equilibration in various conditions even in the presence of scattering in the bulk region. The validity of the analysis is tested in the IQH regime by confirming consistency with previous works. In the FQH regime, we find that the equilibration length for counter-propagating $delta u $ = 1 and $delta u $ = -1/3 channels along a hole-conjugate state at Landau filling factor $ u $ = 2/3 is much shorter than that for co-propagating $delta u $ = 1 and $delta u $ = 1/3 channels along a particle state at $ u $ = 4/3. The difference can be associated to the distinct geometric structures of the edge channels. Our analysis with generalized Hall bar devices would be useful in studying edge equilibration and edge structures.
We consider the dephasing rate of an electron level in a quantum dot, placed next to a fluctuating edge current in the fractional quantum Hall effect. Using perturbation theory, we show that this rate has an anomalous dependence on the bias voltage applied to the neighboring quantum point contact, which originates from the Luttinger liquid physics which describes the Hall fluid. General expressions are obtained using a screened Coulomb interaction. The dephasing rate is strictly proportional to the zero frequency backscattering current noise, which allows to describe exactly the weak to strong backscattering crossover using the Bethe-Ansatz solution.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
