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Register a new userLight-induced bound electron states in two-dimensional systems: Contribution to electron transport
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In two-dimensional (2D) electron systems, an off-resonant high-frequency circularly polarized electromagnetic field can induce the quasi-stationary bound electron states of repulsive scatterers. As a consequence, the resonant scattering of conduction electrons through the quasi-stationary states and the capture of conduction electrons by the states appear. The present theory describes the transport properties of 2D electron gas irradiated by a circularly polarized light, which are modified by these processes. Particularly, it is demonstrated that irradiation of 2D electron systems by the off-resonant field results in the quantum correction to conductivity of resonant kind.
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We report density dependent instabilities in the localised regime of mesoscopic two-dimensional electron systems (2DES) with intermediate strength of background disorder. They are manifested by strong resistance oscillations induced by high perpendicular magnetic fields B_{perp}. While the amplitude of the oscillations is strongly enhanced with increasing B_{perp}, their position in density remains unaffected. The observation is accompanied by an unusual behaviour of the temperature dependence of resistance and activation energies. We suggest the interplay between a strongly interacting electron phase and the background disorder as a possible explanation.
Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby commonly defined by creating barriers for carriers by selective depletion of a pre-existing 2DES. Here we explore an alternative approach: we deplete the 2DES globally by applying a negative voltage to a global top gate and screen the electric field of the top gate only locally using nanoscale gates placed on the wafer surface between the plane of the 2DES and the top gate. Free carriers are located beneath the screen gates and their properties can be controlled by means of geometry and applied voltages. This method promises considerable advantages for the definition of complex circuits by the electric field effect as it allows to reduce the number of gates and simplify gate geometries. Examples are carrier systems with ring topology or large arrays of quantum dots. Here, we present a first exploration of this method pursuing field effect, Hall effect and Aharonov-Bohm measurements to study electrostatic, dynamic and coherent properties.
Current-induced spin polarization (CISP) is rederived in ballistic spin-orbit-coupled electron systems, based on equilibrium statistical mechanics. A simple and useful picture is correspondingly proposed to help understand the CISP and predict the polarization direction. Nonequilibrium Landauer-Keldysh formalism is applied to demonstrate the validity of the statistical picture, taking the linear Rashba-Dresselhaus [001] two-dimensional system as a specific example. Spin densities induced by the CISP in semiconductor heterostructures and in metallic surface states are compared, showing that the CISP increases with the spin splitting strength and hence suggesting that the CISP should be more observable on metal and semimetal surfaces due to the discovered strong Rashba splitting. An application of the CISP designed to generate a spin-Hall pattern in the inplane, instead of the out-of-plane, component is also proposed.
Effects of microwave radiation on magnetoresistance are analyzed in a balance-equation scheme that covers regimes of inter- and intra-Landau level processes and takes account of photon-asissted electron transitions as well as radiation-induced change of the electron distribution for high mobility two-dimensional systems. Short-range scatterings due to background impurities and defects are shown to be the dominant direct contributors to the photoresistance oscillations. The electron temperature characterizing the system heating due to irradiation, is derived by balancing the energy absorption from the radiation field and the energy dissipation to the lattice through realistic electron-phonon couplings, exhibiting resonant oscillation. Microwave modulations of Shubnikov de Haas oscillation amplitude are produced together with microwave-induced resistance oscillations, in agreement with experimental findings. In addition, the suppression of the magnetoresistance caused by low-frequency radiation in the higher magnetic field side is also demonstrated.
Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra-high mobility of $44times10^6$ cm$^2$/Vs at an electron density of $2.0times10^{11}$ /cm$^2$. These results imply only 1 residual impurity for every $10^{10}$ Ga/As atoms. The impact of such low impurity concentration is manifold. Robust stripe/bubble phases are observed, and several new fractional quantum Hall states emerge. Furthermore, the activation gap of the $ u=5/2$ state, which is widely believed to be non-Abelian and of potential use for topological quantum computing, reaches $Deltasimeq820$ mK. We expect that our results will stimulate further research on interaction-driven physics in a two-dimensional setting and significantly advance the field.
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