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Register a new userConditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
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Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential sensitivity of the exchange interaction that mediates the coupling between the qubits. Here we demonstrate the conditional, coherent control of an electron spin qubit in an exchange-coupled pair of $^{31}$P donors implanted in silicon. The coupling strength, $J = 32.06 pm 0.06$ MHz, is measured spectroscopically with unprecedented precision. Since the coupling is weaker than the electron-nuclear hyperfine coupling $A approx 90$ MHz which detunes the two electrons, a native two-qubit Controlled-Rotation gate can be obtained via a simple electron spin resonance pulse. This scheme is insensitive to the precise value of $J$, which makes it suitable for the scale-up of donor-based quantum computers in silicon that exploit the Metal-Oxide-Semiconductor fabrication protocols commonly used in the classical electronics industry.
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Triple quantum dots (TQDs) are promising semiconductor spin qubits because of their all-electrical control via fast, tunable exchange interactions and immunity to global magnetic fluctuations. These qubits can experience strong transverse interaction with photons in the resonant exchange (RX) regime, when exchange is simultaneously active on both qubit axes. However, most theoretical work has been based on phenomenological Fermi-Hubbard models, which may not fully capture the complexity of the qubit spin-charge states in this regime. Here we investigate exchange in Si/SiGe and GaAs TQDs using full configuration interaction (FCI) calculations which better describe practical device operation. We show that high exchange operation in general, and the RX regime in particular, can differ significantly from simple models, presenting new challenges and opportunities for spin-photon coupling. We highlight the impact of device electrostatics and effective mass on exchange and identify a new operating point (XRX) where strong spin-photon coupling is most likely to occur in Si/SiGe TQDs. Based on our numerical results, we analyze the feasibility of a remote entanglement cavity iSWAP protocol and discuss design pathways for improving fidelity. Our analysis provides insight into the requirements for TQD spin-photon transduction and demonstrates more generally the necessity of accurate modeling of exchange in spin qubits.
The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative analytical approach to study the dynamics of exchange-coupled quantum dots with valley degrees of freedom. We show that if the valley splitting is large and electrons are not properly initialized to valley eigenstates, then time evolution of the system will lead to spin-valley entanglement. Spin-valley entanglement will also occur if the valley splitting is small and electrons are not initialized to the same valley state. Additionally, we show that for small valley splitting, spin-valley entanglement does not affect measurement probabilities of two-qubit systems; however, systems with more qubits will be affected. This means that two-qubit gate fidelities measured in two-qubit systems may miss the effects of valley degrees of freedom. Our work shows how the existence of valleys may adversely affect multiqubit fidelities even when the system temperature is very low.
We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated by electrostatic gates on the surface of a GaAs heterostructure. We extract the strength of the capacitive coupling between qubit and double quantum dot and show that the present geometry allows fast conditional gate operation, opening pathways to multi-qubit control and implementation of quantum algorithms with spin qubits.
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flopping-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $pi/2-X$ gate error rates of $sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations.
Quantum computation requires high-fidelity single-qubit and two-qubit gates on a scalable platform. Silicon spin qubits are a promising platform toward realization of this goal. In this paper we show how to perform single-qubit and CZ gates in a linear chain of three spin qubits with always-on exchange coupling, which is relevant for certain dot- and donor-based silicon devices. We also show how to make the CZ gate robust against both charge noise and pulse length error using a two-tone pulse shaping method. The robust pulse maintains a fidelity of 99.99% at 3.5% fluctuations in exchange or pulse amplitude, which is an improvement over the uncorrected pulses where this fidelity can only be maintained for fluctuations in exchange up to 2% or up to 0.2% in amplitude.
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