Electronic properties of V$_2$OPO$_4$ have been investigated by means of hard x-ray photoemission spectroscopy (HAXPES) and subsequent theoretical calculations. The V 1$s$ and 2$p$ HAXPES spectra are consistent with the charge ordering of V$^{2+}$ and V$^{3+}$. The binding energy difference between the V$^{2+}$ and V$^{3+}$ components is unexpectedly large indicating large bonding-antibonding splitting between them in the final states of core level photoemission. The V 1$s$ HAXPES spectrum exhibits a charge transfer satellite which can be analyzed by configuration interaction calculations on a V$_2$O$_9$ cluster. The V 3$d$ spectral weight near the Fermi level is assigned to the 3$d$ $t_{2g}$ orbitals of the V$^{2+}$ site. The broad V 3$d$ spectral distribution is consistent with the strong hybridization between V$^{2+}$ and V$^{3+}$ in the ground state. The core level and valence band HAXPES results indicate substantial charge transfer from the V$^{2+}$ site to the V$^{3+}$ site.7 figure
V 3$d$ charge and orbital states in V$_2$OPO$_4$ have been investigated by means of x-ray absorption spectroscopy (XAS). The electronic structure of V$_2$OPO$_4$ is very unique in that the charge transfer between V$^{2+}$ and V$^{3+}$ in face sharing VO$_6$ chains provides negative thermal expansion as reported by Pachoud {it et al.} [J. Am. Chem. Soc. {bf 140}, 636 (2018).] The near edge region of O 1$s$ XAS exhibits the three features which can be assigned to transitions to O 2$p$ mixed into the unoccupied V 3$d$ $t_{2g}$ and $e_{g}$ orbitals of V$^{2+}$ and V$^{3+}$. The V 2$p$ XAS line shape can be reproduced by multiplet calculations for a mixed valence state with V$^{2+}$ and V$^{3+}$. The polarization dependence of the O 1$s$ and V 2$p$ XAS spectra indicates V 3$d$ orbital order in which $xy$ and $yz$ (or $zx$) orbitals are occupied at the V$^{3+}$ site in the face sharing chains. The occupied $xy$ orbital is essential for the antiferromagnetic coupling between the V$^{2+}$ and V$^{3+}$ sites along the chains while the occupied $yz$ (or $zx$) orbital provides the antiferromagnetic coupling between the V$^{2+}$ and V$^{3+}$ sites between the chains.
We have probed the crystalline electric-field ground states of pure $|J = 7/2, J_z = pm 5/2rangle$ as well as the anisotropic $c$-$f$ hybridization in both valence fluctuating systems $alpha$- and $beta$-YbAlB$_4$ by linear polarization dependence of angle-resolved core level photoemission spectroscopy. Interestingly, the small but distinct difference between abyb was found in the polar angle dependence of linear dichroism, indicating the difference in the anisotropy of $c$-$f$ hybridization which may be essential to a heavy Fermi liquid state in $alpha$-YbAlB$_4$ and a quantum critical state in $beta$-YbAlB$_4$.
Polarization dependent vanadium L edge X-ray absorption spectra of BaVS$_3$ single crystals are measured in the four phases of the compound. The difference between signals with the polarization textbf{E}$perp$textbf{c} and textbf{E}$parallel$textbf{c} (linear dichroism) changes with temperature. Besides increasing intensity of one of the maxima, a new structure appears in the pre-edge region below the metal-insulator transition. More careful examination brings to light that the changes start already with pretransitional charge density wave fluctuations. Simple symmetry analysis suggests that the effect is related to rearrangements in $E_{g}$ and $A_{1g}$ states, and is compatible with the formation of four inequivalent V sites along the V-S chain.
We have studied disorder-induced in-gap states and effect of light illumination in the insulating phase of spinel-type CuIr$_2$S$_4$ using ultra-violet photoemission spectroscopy (UPS). The Ir$^{3+}$/Ir$^{4+}$ charge-ordered gap appears below the metal-insulator transition temperature. However, in the insulating phase, in-gap spectral features with $softgap$ are observed in UPS just below the Fermi level ($E_F$), corresponding to the variable range hopping transport observed in resistivity. The spectral weight at $E_F$ is not increased by light illumination, indicating that the Ir$^{4+}$-Ir$^{4+}$ dimer is very robust although the long-range octamer order would be destructed by the photo-excitation. Present results suggest that the Ir$^{4+}$-Ir$^{4+}$ bipolaronic hopping and disorder effects are responsible for the conductivity of CuIr$_2$S$_4$.
Bulk-sensitive hard x-ray photoemission spectroscopy (HAXPES) reveals for as-grown epitaxial films of half-metallic ferromagnetic CrO2(100) a pronounced screening feature in the Cr 2p3/2 core level and an asymmetry in the O 1s core level. This gives evidence of a finite, metal-type Fermi edge, which is surprisingly not observed in HAXPES. A spectral weight shift in HAXPES away from the Fermi energy is attributed to single-ion recoil effects due to high energy photoelectrons. In conjunction with inverse PES the intrinsic correlated Mott-Hubbard-type electronic structure is unravelled, yielding an averaged Coulomb correlation energy Uav ~ 3.2 eV.
K. Murota
,E. Pachoud
,J. P. Attfield
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(2020)
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"Charge correlation in V$_2$OPO$_4$ probed by hard x-ray photoemission spectroscopy"
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Takashi Mizokawa
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