We demonstrate the creation of robust localized zero-energy states that are induced into topologically trivial systems by insertion of a PT-symmetric defect with local gain and loss. A pair of robust localized states induced by the defect turns into zero-energy modes when the gain-loss contrast exceeds a threshold, at which the defect states encounter an exceptional point. Our approach can be used to obtain robust lasing or perfectly absorbing modes in any part of the system.
We show that complex PT-symmetric photonic lattices can lead to a new class of self-imaging Talbot effects. For this to occur, we find that the input field pattern, has to respect specific periodicities which are dictated by the symmetries of the system. While at the spontaneous PT-symmetry breaking point, the image revivals occur at Talbot lengths governed by the characteristics of the passive lattice, at the exact phase it depends on the gain and loss parameter thus allowing one to control the imaging process.
Photonic systems with parity-time (PT) symmetry and topology are attracting considerable attentions. In this work, topological near-zero edge states are studied in PT-symmetric photonic lattice and the results indicate that the near-zero edge states can be broken spontaneously in spite of the unbroken PT symmetry. To achieve the stable topological near-zero mode, a binary lattice with carefully designed PT-symmetric is proposed. Further study shows such a structure supports a stable topological interface state experiences phase transition similar to the bulk states in infinite lattice and thus possess real-eigenvalues even with unbroken PT phase. Our study enriches the content of non-Hermitian topological physics and might have potential applications in the fields of topological lasing and quantum computation.
We present a systematic analysis of the stationary regimes of nonlinear parity-time(PT) symmetric laser composed of two coupled fiber cavities. We find that power-dependent nonlinear phase shifters broaden regions of existence of both PT-symmetric and PT-broken modes, and can facilitate transitions between modes of different types. We show the existence of non-stationary regimes and demonstrate an ambiguity of the transition process for some of the unstable states. We also identify the presence of higher-order stationary modes, which return to the initial state periodically after a certain number of round-trips.
We find that a new type of non-reciprocal modes exist at an interface between two emph{parity-time} ($mathcal{PT}$) symmetric magnetic domains (MDs) near the frequency of zero effective permeability. The new mode is non-propagating and purely magnetic when the two MDs are semi-infinite while it becomes propagating in the finite case. In particular, two pronounced nonreciprocal responses could be observed via the excitation of this mode: one-way optical tunneling for oblique incidence and unidirectional beam shift at normal incidence. When the two MDs system becomes finite in size, it is found that perfect-transmission mode could be achieved if $mathcal{PT}$-symmetry is maintained. The unique properties of such an unusual mode are investigated by analytical modal calculation as well as numerical simulations. The results suggest a new approach to the design of compact optical isolator.
Atomic-scale helices exist as motifs for several material lattices. We examine a tight-binding model for a single one-dimensional monatomic chain with a p-orbital basis coiled into a helix. A topologically nontrivial phase emerging from this model supports a zero-energy mode localized to a boundary, always embedded within a continuum band, regardless of termination site. We identify a topological invariant for this phase that is related to the number of zero energy end modes by means of the bulk-boundary correspondence, and give strict conditions for the existence of the bound state. Another, non-topological, gapped edge mode in the model spectrum has practical consequences for surface states in e.g. trigonal tellurium and selenium and other van der Waals-bonded one-dimensional semiconductors.