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Register a new userDefect-Correlated Skyrmions and Controllable Generation in Perpendicularly Magnetized CoFeB Ultrathin Films
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Skyrmions have attracted significant interest due to their topological spin structures and fascinating physical features. The skyrmion phase arises in materials with Dzyaloshinskii-Moriya (DM) interaction at interfaces or in volume of non-centrosymmetric materials. However, although skyrmions were generated experimentally, one critical intrinsic relationship between fabrication, microstructures, magnetization and the existence of skyrmions remains to be established. Here, two series of CoFeB ultrathin films with controlled atomic scale structures are employed to reveal this relationship. By inverting the growth order, the amount of defects can be artificially tuned, and skyrmions are shown to be preferentially formed at defect sites. The stable region and the density of the skyrmions can be efficiently controlled in the return magnetization loops by utilizing first-order reversal curves to reach various metastable states. These findings establish the general and intrinsic relationship from sample preparation to skyrmion generation, offering an universal method to control skyrmion density.
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Perpendicular magnetic materials with low damping constant and high thermal stability have great potential for realizing high-density, non-volatile, and low-power consumption spintronic devices, which can sustain operation reliability for high processing temperatures. In this work, we study the Gilbert damping constant ({alpha}) of perpendicularly magnetized W/CoFeB/MgO films with a high perpendicular magnetic anisotropy (PMA) and superb thermal stability. The {alpha} of these PMA films annealed at different temperatures is determined via an all-optical Time-Resolved Magneto-Optical Kerr Effect method. We find that {alpha} of these W/CoFeB/MgO PMA films decreases with increasing annealing temperature, reaches a minimum of {alpha} = 0.016 at an annealing temperature of 350 {deg}C, and then increases to 0.024 after post-annealing at 400 {deg}C. The minimum {alpha} observed at 350 {deg}C is rationalized by two competing effects as the annealing temperature becomes higher: the enhanced crystallization of CoFeB and dead-layer growth occurring at the two interfaces of the CoFeB layer. We further demonstrate that {alpha} of the 400 {deg}C-annealed W/CoFeB/MgO film is comparable to that of a reference Ta/CoFeB/MgO PMA film annealed at 300 {deg}C, justifying the enhanced thermal stability of the W-seeded CoFeB films.
We measure the frequencies of spin waves in nm-thick perpendicularly magnetized FeCoB systems, and model the frequencies to deduce the exchange stiffness of this material in the ultrathin limit. For this, we embody the layers in magnetic tunnel junctions patterned into circular nanopillars of diameters ranging from 100 to 300 nm and we use magneto-resistance to determine which rf-current frequencies are efficient in populating the spin wave modes. Micromagnetic calculations indicate that the ultrathin nature of the layer and the large wave vectors used ensure that the spin wave frequencies are predominantly determined by the exchange stiffness, such that the number of modes in a given frequency window can be used to estimate the exchange. For 1 nm layers the experimental data are consistent with an exchange stiffness A= 20 pJ/m, which is slightly lower that its bulk counterpart. The thickness dependence of the exchange stiffness has strong implications for the numerous situations that involve ultrathin films hosting strong magnetization gradients, and the micromagnetic description thereof.
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic instabilities via spin transfer torques (STT). At interface(s), spin current generated from the spin Hall effect in a neighboring layer can exert torques, referred to as the spin Hall torques, on the magnetic moments. Here, we study current induced magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures with a heavy metal (HM) underlayer. Depending on the thickness of the HM underlayer, we find distinct differences in the inplane field dependence of the threshold switching current. The STT is likely responsible for the magnetization reversal for the thinner underlayer films whereas the spin Hall torques cause the switching for thicker underlayer films. For the latter, we find differences in the switching current for positive and negative currents and initial magnetization directions. We find that the growth process during the film deposition introduces an anisotropy that breaks the symmetry of the system and causes the asymmetric switching. The presence of such symmetry breaking anisotropy enables deterministic magnetization switching at zero external fields.
The domain structure in in-plane magnetized Fe/Ni/W(110) films is investigated using spin-polarized low-energy electron microscopy. A novel transition of the domain wall shape from a zigzag-like pattern to straight is observed as a function of the film thickness, which is triggered by the transition of the domain wall type from out-of-plane chiral wall to in-plane Neel wall. The contribution of the Dzyaloshinskii-Moriya interaction to the wall energy is proposed to explain the transition of the domain wall shape, which is supported by Monte-Carlo simulations.
We demonstrated that thick Permalloy films exhibiting a weak growth-induced perpendicular magnetic anisotropy can be employed as an ideal test system for the investigation of gyration dynamics in topologically trivial and non-trivial magnetic states ranging from an isolated magnetic skyrmion to more complex n$pi$ spin configurations.
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