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Register a new userLow Gain Avalanche Detectors for the HADES reaction time (T$_0$) detector upgrade
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Low Gain Avalanche Detector (LGAD) technology has been used to design and construct prototypes of time-zero detector for experiments utilizing proton and pion beams with High Acceptance Di-Electron Spectrometer (HADES) at GSI Darmstadt, Germany. LGAD properties have been studied with proton beams at the COoler SYnchrotron (COSY) facility in Julich, Germany. We have demonstrated that systems based on a prototype LGAD operated at room temperature and equipped with leading-edge discriminators reach a time precision below 50 ps. The application in the HADES, experimental conditions, as well as the test results obtained with proton beams are presented.
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Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.
We report a precise TCAD simulation for low gain avalanche detector (LGAD) with calibration by secondary ion mass spectroscopy (SIMS). The radiation model - LGAD Radiation Damage Model (LRDM) combines local acceptor degeneration with global deep energy levels is proposed. The LRDM could predict the leakage current level and the behavior of capacitance for irradiated LGAD sensor at -30 $^{circ}$C after irradiation fluence $rm Phi_{eq}=2.5 times 10^{15} ~n_{eq}/cm^{2}$.
Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $Phi_{eq}=3cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^circ$C in steps to times $>20000$ minutes. Their properties, mainly full depletion voltage, gain layer depletion voltage, generation and leakage current, as well as their performance in terms of collected charge and time resolution, were determined between the steps. It was found that the effect of annealing on timing resolution and collected charge is not very large and mainly occurs within the first few tens of minutes. It is a consequence of active initial acceptor concentration decrease in the gain layer with time, where changes of around 10% were observed. For any relevant annealing times for detector operation the changes of effective doping concentration in the bulk negligibly influences the performance of the device, due to their small thickness and required high bias voltage operation. At very long annealing times the increase of the effective doping concentration in the bulk leads to a significant increase of the electric field in the gain layer and, by that, to the increase of gain at given voltage. The leakage current decreases in accordance with generation current annealing.
This paper presents results that take a critical step toward proving 10 ps timing resolutions feasibility for particle identification in the TOPSiDE detector concept for the Electron-Ion Collider. Measurements of LGADs with a thickness of 35 micro-m and 50 micro-m are evaluated with a 120 GeV proton beam. The performance of the gain and timing response is assessed, including the dependence on the reverse bias voltage and operating temperature. The best timing resolution of UFSDs in a test beam to date is achieved using three combined planes of 35 micro-m thick LGADs at -30 degree celsius with a precision of 14.3 ps (uncertainty 1.5 ps).
For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |{eta}| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 {mu}m thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sensors with a surface area of 1.3x1.3 mm2 and arrays with 2x2 pads with a surface area of 2x2 mm^2 or 3x3 mm^2 each and different implant doses of the p+ multiplication layer. They are obtained from data collected during a beam test campaign in Autumn 2016 with a pion beam of 120 GeV energy at the CERN SPS. In addition to several quantities measured inclusively for each pad, the gain, efficiency and time resolution have been estimated as a function of the position of the incident particle inside the pad by using a beam telescope with a position resolution of few {mu}m. Different methods to measure the time resolution are compared, yielding consistent results. The sensors with a surface area of 1.3x1.3 mm^2 have a time resolution of about 40 ps for a gain of 20 and of about 27 ps for a gain of 50 and fulfill the HGTD requirements. Larger sensors have, as expected, a degraded time resolution. All sensors show very good efficiency and time resolution uniformity.
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