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Register a new userLocal characterization and engineering of proximitized correlated states in graphene-NbSe$_2$ vertical heterostructures
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Using a van der Waals vertical heterostructure consisting of monolayer graphene, monolayer hBN and NbSe$_2$, we have performed local characterization of induced correlated states in different configurations. At a temperature of 4.6 K, we have shown that both superconductivity and charge density waves can be induced in graphene from NbSe2 by proximity effects. By applying a vertical magnetic field, we imaged the Abrikosov vortex lattice and extracted the coherence length for the proximitized superconducting graphene. We further show that the induced correlated states can be completely blocked by adding a monolayer hBN between the graphene and the NbSe$_2$, which demonstrates the importance of the tunnel barrier and surface conditions between the normal metal and superconductor for the proximity effect.
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Transition metal dichalcogenides (TMDC) are a rich family of two-dimensional materials displaying a multitude of different quantum ground states. In particular, d$^3$ TMDCs are paradigmatic materials hosting a variety of symmetry broken states, including charge density waves, superconductivity, and magnetism. Among this family, NbSe$_2$ is one of the best-studied superconducting materials down to the monolayer limit. Despite its superconducting nature, a variety of results point towards strong electronic repulsions in NbSe$_2$. Here, we control the strength of the interactions experimentally via quantum confinement effects and use low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) to demonstrate that NbSe$_2$ is in strong proximity to a correlated insulating state. This reveals the coexistence of competing interactions in NbSe$_2$, creating a transition from a superconducting to an insulating quantum correlated state by confinement-controlled interactions. Our results demonstrate the dramatic role of interactions in NbSe$_2$, establishing NbSe$_2$ as a correlated superconductor with competing interactions.
Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe$_2$ - MoSe$_2$ vdW heterostructures, which provide an important model system to study metal-semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy we discover a sharp emission feature, L1, that is localized at the NbSe$_2$-capped regions of MoSe$_2$. L1 is observed at energies below the commonly-studied MoSe$_2$ excitons and trions, and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. Remarkably, L1 is very robust not just in different samples, but also under a variety of fabrication processes. Using first-principles calculations we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe$_2$ and NbSe$_2$ - MoSe$_2$ heterostructure. We discuss the implications of our studies for atomically-thin optoelectronics devices with atomically-sharp interfaces and tunable electronic structures.
Finite graphene nanoribbon (GNR) heterostructures host intriguing topological in-gap states (Rizzo, D. J. et al.~textit{Nature} textbf{2018}, textit{560}, 204]). These states may be localized either at the bulk edges, or at the ends of the structure. Here we show that correlation effects (not included in previous density functional simulations) play a key role in these systems: they result in increased magnetic moments at the ribbon edges accompanied by a significant energy renormalization of the topological end states -- even in the presence of a metallic substrate. Our computed results are in excellent agreement with the experiments. Furthermore, we discover a striking, novel mechanism that causes an energy splitting of the non-zero-energy topological end states for a weakly screened system. We predict that similar effects should be observable in other GNR heterostructures as well.
We analyze Andreev bound states (ABSs) that form in normal sections of a Rashba nanowire that is only partially covered by a superconducting layer. These ABSs are localized close to the ends of the superconducting section and can be pinned to zero energy over a wide range of magnetic field strengths even if the nanowire is in the non-topological regime. For finite-size nanowires (typically $lesssim 1$ $mu$m in current experiments), the ABS localization length is comparable to the length of the nanowire. The probability density of an ABS is therefore non-zero throughout the nanowire and differential-conductance calculations reveal a correlated zero-bias peak (ZBP) at both ends of the nanowire. When a second normal section hosts an additional ABS at the opposite end of the superconducting section, the combination of the two ABSs can mimic the closing and reopening of the bulk gap in local and non-local conductances accompanied by the appearance of the ZBP. These signatures are reminiscent of those expected for Majorana bound states (MBSs) but occur here in the non-topological regime. Our results demonstrate that conductance measurements of correlated ZBPs at the ends of a typical superconducting nanowire or an apparent closing and reopening of the bulk gap in the local and non-local conductance are not conclusive indicators for the presence of MBSs.
Full experimental control of local spin-charge interconversion is of primary interest for spintronics. Heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have provided so far global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we utilize magneto-optical Kerr microscopy to resolve the gate-tunable, local current-induced spin polarisation in graphene/WTe$_2$ van der Waals (vdW) heterostructures. It turns out that even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We develop a theoretical model which explains the gate- and bias-dependent onset and spatial distribution of the massive Kerr signal on the basis of interlayer tunnelling, along with the reduced point group symmetry and inherent Berry curvature of the heterostructure. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important further step toward electrical spin control on the nanoscale.
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