Do you want to publish a course? Click here

Room-temperature operation of a molecular spin photovoltaic device on a transparent substrate

337   0   0.0 ( 0 )
 Added by Francesco Calavalle
 Publication date 2020
  fields Physics
and research's language is English




Ask ChatGPT about the research

Incorporating multifunctionality along with the spin-related phenomenon in a single device is of great interest for the development of next generation spintronic devices. One of these challenges is to couple the photo-response of the device together with its magneto-response to exploit the multifunctional operation at room temperature. Here, the multifunctional operation of a single layer p-type molecular spin valve is presented, where the device shows a photovoltaic effect at the room temperature on a transparent glass substrate. The generated photovoltage is almost three times larger than the applied bias to the device which facilitates the modulation of the magnetic response of the device both with bias and light. It is observed that the photovoltage modulation with light and magnetic field is linear with the light intensity. The device shows an increase in power conversion efficiency under magnetic field, an ability to invert the current with magnetic field and under certain conditions it can act as a spin-photodetector with zero power consumption in the standby mode. The room temperature exploitation of the interplay among light, bias and magnetic field in the single device with a p-type molecule opens a way towards more complex and efficient operation of a complete spin-photovoltaic cell.



rate research

Read More

111 - R. Ishihara , Y. Ando , S. Lee 2019
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables reconfigurable and nonvolatile NAND or OR operation in one device. The device for the spin XOR gate consists of three iron (Fe)/cobalt (Co)/magnesium oxide (MgO) electrodes, i.e., two input and one output electrodes. Spins are injected into the Si channel from the input electrodes whose spin angular momentum corresponds to the binary input 1 or 0. The spin drift effect is controlled by a lateral electric field in the Si channel to adjust the spin accumulation voltages under two different parallel configurations, corresponding to (1, 1) and (0, 0), so that they exhibit the same value. As a result, the spin accumulation voltage detected by the output electrode exhibits three different voltages, represented by an XOR gate. The one-dimensional spin drift-diffusion model clearly explains the obtained XOR behavior. Charge current detection of the spin XOR gate is also demonstrated. The detected charge current has a maximum of 0.94 nA, the highest value in spin XOR gates reported thus far. Furthermore, gate voltage modulation of the spin XOR gate is also demonstrated, which enables operation of multiple MLG devices.
73 - Runze Chen , Chen Li , Yu Li 2020
Magnetic skyrmions have attracted considerable interest, especially after their recent experimental demonstration at room temperature in multilayers. The robustness, nanoscale size and non-volatility of skyrmions have triggered a substantial amount of research on skyrmion-based low-power, ultra-dense nanocomputing and neuromorphic systems such as artificial synapses. Room-temperature operation is required to integrate skyrmionic synapses in practical future devices. Here, we numerically propose a nanoscale skyrmionic synapse composed of magnetic multilayers that enables room-temperature device operation tailored for optimal synaptic resolution. We demonstrate that when embedding such multilayer skyrmionic synapses in a simple spiking neural network (SNN) with unsupervised learning via the spike-timing-dependent plasticity rule, we can achieve only a 78% classification accuracy in the MNIST handwritten data set under realistic conditions. We propose that this performance can be significantly improved to about 98.61% by using a deep SNN with supervised learning. Our results illustrate that the proposed skyrmionic synapse can be a potential candidate for future energy-efficient neuromorphic edge computing.
The implementation of quantum networks involving quantum memories and photonic channels without the need for cryogenics would be a major technological breakthrough. Nitrogen-vacancy centers have excellent spin properties even at room temperature, but phonon-induced broadening makes it challenging to interface these spins with photons at non-cryogenic temperatures. Inspired by recent progress in achieving ultra-high mechanical quality factors, we propose that this challenge can be overcome by spin-opto-mechanical transduction. We quantify the coherence of the interface by calculating the indistinguishability of the emitted photons and describe promising paths towards experimental implementation.
Methods of optical dynamic nuclear polarization (DNP) open the door to the replenishable hyperpolarization of nuclear spins, boosting their NMR/MRI signature by orders of magnitude. Nanodiamond powder rich in negatively charged Nitrogen Vacancy (NV) defect centers has recently emerged as one such promising platform, wherein 13C nuclei can be hyperpolarized through the optically pumped defects completely at room temperature and at low magnetic fields. Given the compelling possibility of relaying this 13C polarization to nuclei in external liquids, there is an urgent need for the engineered production of highly hyperpolarizable diamond particles. In this paper, we report on a systematic study of various material dimensions affecting optical 13C hyperpolarization in diamond particles -- especially electron irradiation and annealing conditions that drive NV center formation. We discover surprisingly that diamond annealing at elevated temperatures close to 1720C have remarkable effects on the hyperpolarization levels, enhancing them by upto 36-fold over materials annealed through conventional means. We unravel the intriguing material origins of these gains, and demonstrate they arise from a simultaneous improvement in NV electron relaxation time and coherence time, as well as the reduction of paramagnetic content, and an increase in 13C relaxation lifetimes. Overall this points to significant recovery of the diamond lattice from radiation damage as a result of the high-temperature annealing. Our work suggests methods for the guided materials production of fluorescent, 13C hyperpolarized, nanodiamonds and pathways for their use as multi-modal (optical and MRI) imaging and hyperpolarization agents.
402 - F. Reis , G. Li , L. Dudy 2016
Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming bismuthene, on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا