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Register a new userMetamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal
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In this paper, the magnetic and transport properties were systematically studied for EuAg$_4$As$_2$ single crystals, crystallizing in a centrosymmetric trigonal CaCu$_4$P$_2$ type structure. It was confirmed that two magnetic transitions occur at $textit{T}$$_{N1}$ = 10 K and $textit{T}$$_{N2}$ = 15 K, respectively. With the increasing field, the two transitions are noticeably driven to lower temperature. At low temperatures, applying a magnetic field in the $textit{ab}$ plane induces two successive metamagnetic transitions. For both $textit{H}$ $parallel$ $textit{ab}$ and $textit{H}$ $parallel$ $textit{c}$, EuAg$_4$As$_2$ shows a positive, unexpected large magnetoresistance (up to 202%) at low fields below 10 K, and a large negative magnetoresistance (up to -78%) at high fields/intermediate temperatures. Such anomalous field dependence of magnetoresistance may have potential application in the future magnetic sensors. Finally, the magnetic phase diagrams of EuAg$_{4}$As$_{2}$ were constructed for both $textit{H}$ $parallel$ $textit{ab}$ and $textit{H}$ $parallel$ $textit{c}$.
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We report temperature dependent measurements of ambient pressure specific heat, magnetic susceptibility, anisotropic resistivity and thermal expansion as well as in-plane resistivity under pressure up to 20.8 kbar on single crystals of EuAg$_4$As$_2$. Based on thermal expansion and in-plane electrical transport measurements at ambient pressure this compound has two, first order, structural transitions in 80 - 120 K temperature range. Ambient pressure specific heat, magnetization and thermal expansion measurements show a cascade of up to seven transitions between 8 and 16 K associated with the ordering of the Eu$^{2+}$ moments. In-plane electrical transport is able to detect more prominent of these transitions: at 15.5, 9.9, and 8.7 K as well as a weak feature at 11.8 K at ambient pressure. Pressure dependent electrical transport data show that the magnetic transitions shift to higher temperatures under pressure, as does the upper structural transition, whereas the lower structural transition is suppressed and ultimately vanishes. A jump in resistivity, associated with the upper structural transition, decreases under pressure with an extrapolated disappearance (or a change of sign) by 30-35 kbar. In the 10 - 15 kbar range a kink in the pressure dependence of the upper structural transition temperature as well as the high and low temperature in-plane resistivities suggest that a change in the electronic structure may occur in this pressure range. The results are compared with the literature data for SrAg$_4$As$_2$.
We report the measurements of anisotropic magnetization and magnetoresistance on single crystals of EuFe$_2$As$_2$, a parent compound of ferro-arsenide high-temperature superconductor. Apart from the antiferromagnetic (AFM) spin-density-wave transition at 186 K associated with Fe moments, the compound undergoes another magnetic phase transition at 19 K due to AFM ordering of Eu$^{2+}$ spins ($J=S=7/2$). The latter AFM state exhibits metamagnetic transition under magnetic fields. Upon applying magnetic field with $Hparallel c$ at 2 K, the magnetization increases linearly to 7.0 $mu_{B}$/f.u. at $mu_{0}H$=1.7 T, then keeps at this value of saturated Eu$^{2+}$ moments under higher fields. In the case of $Hparallel ab$, the magnetization increases step-like to 6.6 $mu_{B}$/f.u. with small magnetic hysteresis. A metamagnetic phase was identified with the saturated moments of 4.4 $mu_{B}$/f.u. The metamagnetic transition accompanies with negative in-plane magnetoresistance, reflecting the influence of Eu$^{2+}$ moments ordering on the electrical conduction of FeAs layers. The results were explained in terms of spin-reorientation and spin-reversal based on an $A$-type AFM structure for Eu$^{2+}$ spins. The magnetic phase diagram has been established.
Magnetic-field effect on the magnetic and electric properties in a chiral polar ordered corundum Ni$_2$InSbO$_6$ has been investigated. Single-crystal soft x-ray and neutron diffraction measurements confirm long-wavelength magnetic modulation. The modulation direction tends to align along the magnetic field applied perpendicular to the polar axis, suggesting that the nearly proper-screw type helicoid should be formed below 77,K. The application of a high magnetic field causes a metamagnetic transition. In a magnetic field applied perpendicular to the polar axis, a helix-to-canted antiferromagnetic transition takes place through the intermediate soliton lattice type state. On the other hand, a magnetic field applied along the polar axis induces a first-order metamagnetic transition. These metamagnetic transitions accompany a change in the electric polarization along the polar axis.
The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions and large non-saturation magnetoresistance. In this paper, we have successfully grown the high-quality V1-deltaSb2 single crystals by Sb flux method and investigated their electronic transport properties. A large positive magnetoresistance that reaches 477% under a magnetic field of 12 T at T = 1.8 K was observed. Notably, the magnetoresistance showed a cusp-like feature at the low magnetic fields and such feature weakened gradually as the temperature increased, which indicated the presence of weak antilocalization effect (WAL). The angle-dependent magnetoconductance and the ultra-large prefactor alpha extracted from the Hikami-Larkin-Nagaoka equation revealed that the WAL effect is a 3D bulk effect originated from the three-dimensional bulk spin-orbital coupling.
Naturally occurring spin-valve-type magnetoresistance (SVMR), recently observed in Sr2FeMoO6 samples, suggests the possibility of decoupling the maximal resistance from the coercivity of the sample. Here we present the evidence that SVMR can be engineered in specifically designed and fabricated core-shell nanoparticle systems, realized here in terms of soft magnetic Fe3O4 as the core and hard magnetic insulator CoFe2O4 as the shell materials. We show that this provides a magnetically switchable tunnel barrier that controls the magnetoresistance of the system, instead of the magnetic properties of the magnetic grain material, Fe3O4, and thus establishing the feasibility of engineered SVMR structures.
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