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Register a new userDirect Mapping of Local Seebeck Coefficient in 2D Material Nanostructures via Scanning Thermal Gate Microscopy
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Local variations in the Seebeck coefficient in low-dimensional materials-based nanostructures and devices play a major role in their thermoelectric performance. Unfortunately, currently most thermoelectric measurements probe the aggregate characteristics of the device as a whole, failing to observe the effects of the local variations and internal structure. Such variations can be caused by local defects, geometry, electrical contacts or interfaces and often substantially influence thermoelectric properties, most profoundly in two-dimensional (2D) materials. Here, we use Scanning Thermal Gate Microscopy (STGM), a non-invasive method not requiring an electrical contact between the nanoscale tip and the probed sample, to obtain nanoscale resolution 2D maps of the thermovoltage in graphene samples. We investigate a junction formed between single-layer and bilayer graphene and identify the impact of internal strain and Fermi level pinning by the contacts using a deconvolution method to directly map the local Seebeck coefficient. The new approach paves the way for an in-depth understanding of thermoelectric behaviour and phenomena in 2D materials nanostructures and devices.
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This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.
In this work we present the results of an experiment to locally resolve the spin Seebeck effect in a high-quality Pt/YIG sample. We achieve this by employing a locally heated scanning thermal probe to generate a highly local non-equilibrium spin current. To support our experimental results, we also present a model based on the non-equilibrium thermodynamic approach which is in a good agreement with experimental findings. To further corroborate our results, we index the locally resolved spin Seebeck effect with that of the local magnetisation texture by MFM and correlate corresponding regions. We hypothesise that this technique allows imaging of magnetisation textures within the magnon diffusion length and hence characterisation of spin caloritronic materials at the nanoscale.
We study the relationship between the local density of states (LDOS) and the conductance variation $Delta G$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift $Delta G$ is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers-Kronig relation holds between LDOS and $Delta G$. We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov-Bohm rings including a random distribution of impurities and analyze the LDOS-$Delta G$ correspondence by means of exact numerical simulations, when localized states or semi-classical orbits characterize the wavefunction of the system.
In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves.
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