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Register a new userStructures and Properties of $beta$-Titanium Doping Trace Transition Metal Elements: a Density Functional Theory Study
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We systematically calculate the structure, formation enthalpy, formation free energy, elastic constants and electronic structure of Ti$_{0.98}$X$_{0.02}$ system by density functional theory (DFT) simulations to explore the effect of transition metal X (X=Ag, Cd, Co, Cr, Cu, Fe, Mn, Mo, Nb, Ni, Pd, Rh, Ru, Tc, and Zn) on the stability mechanism of $beta$-titanium. Based on our calculations, the results of formation enthalpy and free energy show that adding trace X is beneficial to the thermodynamic stability of $beta$-titanium. This behavior is well explained by the density of state (DOS). However, the tetragonal shear moduli of Ti$_{0.98}$X$_{0.02}$ systems are negative, indicating that $beta$-titanium doping with a low concentration of X is still elastically unstable at 0 K. Therefore, we theoretically explain that $beta$-titanium doping with trace transition metal X is unstable in the ground state.
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Proper inclusion of van der Waals (vdW) interactions in theoretical simulations based on standard density functional theory (DFT) is crucial to describe the physics and chemistry of systems such as organic and layered materials. Many encouraging approaches have been proposed to combine vdW interactions with standard approximate DFT calculations. Despite many vdW studies, there is no consensus on the reliability of vdW methods. To help further development of vdW methods, we have assessed various vdW functionals through the calculation of structural prop- erties at equilibrium, such as lattice constants, bulk moduli, and cohesive energies, for bulk solids, including alkali, alkali-earth, and transition metals, with BCC, FCC, and diamond structures as the ground state structure. These results provide important information for the vdW-related materials research, which is essential for designing and optimizing materials systems for desired physical and chemical properties.
This study reports on the properties of nitrogen doped titanium dioxide $TiO_2$ thin films considering the application as transparent conducting oxide (TCO). Sets of thin films were prepared by sputtering a titanium target under oxygen atmosphere on a quartz substrate at 400 or 500{deg}C. Films were then doped at the same temperature by 150 eV nitrogen ions. The films were prepared in Anatase phase which was maintained after doping. Up to 30at% nitrogen concentration was obtained at the surface, as determined by in situ x-ray photoelectron spectroscopy (XPS). Such high nitrogen concentration at the surface lead to nitrogen diffusion into the bulk which reached about 25 nm. Hall measurements indicate that average carrier density reached over $10^{19} cm^{-3}$ with mobility in the range of $0.1$ to $1 cm^2V^{-1}s^{-1}$. Resistivity about $3.10^{-1} Omega cm$ could be obtained with 85% light transmission at 550 nm. These results indicate that low energy implantation is an effective technique for $TiO_2$ doping that allows an accurate control of the doping process independently from the TiO2 preparation. Moreover, this doping route seems promising to attain high doping levels without significantly affecting the film structure. Such approach could be relevant for preparation of $N:TiO_2$ transparent conduction electrodes (TCE).
We use dispersion-corrected density-functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post-transition-metal chalcogenides, to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the energetic orderings of polytypes, but we find that for each material there are multiple stacking orders with relative energies of less than 1 meV per monolayer unit cell, implying that stacking faults are expected to be abundant in all post-transition-metal chalcogenides. By fitting a simple model to all our energy data, we predict that the most stable hexagonal structure has P$6_3$/mmc space group in each case, but that the stacking order differs between GaS, GaSe, GaTe, and InS on the one hand and InSe and InTe on the other. At zero pressure, the relative energies obtained with different functionals disagree by around 1-5 meV per monolayer unit cell, which is not sufficient to identify the most stable structure unambiguously; however, multi-GPa pressures reduce the number of competing phases significantly. At higher pressures, an AB$$-stacked structure of the most stable monolayer polytype is found to be the most stable bulk structure; this structure has not been reported in experiments thus far.
We present a computationally efficient method to obtain the spectral function of bulk systems in the framework of steady-state density functional theory (i-DFT) using an idealized Scanning Tunneling Microscope (STM) setup. We calculate the current through the STM tip and then extract the spectral function from the finite-bias differential conductance. The fictitious non-interacting system of i-DFT features an exchange-correlation (xc) contribution to the bias which guarantees the same current as in the true interacting system. Exact properties of the xc bias are established using Fermi-liquid theory and subsequently implemented to construct approximations for the Hubbard model. We show for two different lattice structures that the metal-insulator transition is captured by i-DFT.
These lecture notes contain a brief practical introduction to doing density functional theory calculations for crystals using the open source Quantum Espresso software. The level is aimed at graduate students who are studying condensed matter or solid state physics, either theoretical or experimental.
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