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Register a new userWorking principles of doping-well structures for high-mobility two-dimensional electron systems
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Added by
Edwin Yoonjang Chung
Publication date
2020
fields
Physics
and research's language is
English
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Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultra-high-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.
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Effects of microwave radiation on magnetoresistance are analyzed in a balance-equation scheme that covers regimes of inter- and intra-Landau level processes and takes account of photon-asissted electron transitions as well as radiation-induced change of the electron distribution for high mobility two-dimensional systems. Short-range scatterings due to background impurities and defects are shown to be the dominant direct contributors to the photoresistance oscillations. The electron temperature characterizing the system heating due to irradiation, is derived by balancing the energy absorption from the radiation field and the energy dissipation to the lattice through realistic electron-phonon couplings, exhibiting resonant oscillation. Microwave modulations of Shubnikov de Haas oscillation amplitude are produced together with microwave-induced resistance oscillations, in agreement with experimental findings. In addition, the suppression of the magnetoresistance caused by low-frequency radiation in the higher magnetic field side is also demonstrated.
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.
Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems (2DES), the spin lifetime strongly depends on the initial degree of spin polarization due to the electron-electron interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an effective out-of-plane magnetic field and thus reduces the spin-flip rate. By time-resolved Faraday rotation (TRFR) techniques, we demonstrate that the spin lifetime is increased by an order of magnitude as the initial spin polarization degree is raised from the low-polarization limit to several percent. We perform control experiments to decouple the excitation density in the sample from the spin polarization degree and investigate the interplay of the internal HF field and an external perpendicular magnetic field. The lifetime of spins oriented in the plane of a [001]-grown 2DES is strongly anisotropic if the Rashba and Dresselhaus spin-orbit fields are of the same order of magnitude. This anisotropy, which stems from the interference of the Rashba and the Dresselhaus spin-orbit fields, is highly density-dependent: as the electron density is increased, the kubic Dresselhaus term becomes dominant and reduces the anisotropy.
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