No Arabic abstract
Based on reliable $ab:initio$ computations and the numerical renormalization group method, systematic studies on a two-dimensional GaSe monolayer with a Co adatom have been carried out. It is shown that the stable lowest-energy configuration of the system involves the Co adatom located over Ga atom. For such configuration, it is demonstrated that the electronic and magnetic properties of the system can be effectively controlled by means of external factors, such as magnetic field, gate voltage or temperature. Moreover, if properly tuned, the GaSe-Co system can also exhibit the Kondo effect. The development of the Kondo phenomenon is revealed in the local density of states of the Co adatom, its magnetic field dependence, which presents the splitting of the Kondo peak, as well as in the temperature dependence of the conductance, which exhibits scaling typical of the spin one-half Kondo effect.
Interactions of magnetic elements with graphene may lead to various electronic states that have potential applications. We report an in-situ experiment in which the quantum transport properties of graphene are measured with increasing cobalt coverage in continuous ultra-high vacuum environment. The results show that e-beam deposited cobalt forms clusters on the surface of graphene, even at low sample temperatures. Scattering of charge carriers by the absorbed cobalt clusters results in the disappearance of the Shubnikov-de Haas (SdH) oscillations and the appearance of negative magnetoresistance (MR) which shows no sign of saturation up to an applied magnetic field of 9 T. We propose that these observations could originate from quantum interference driven by cobalt disorder and can be explained by the weak localization theory.
We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab-initio modelling we are able to link this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. The thickness-controlled modulation of the optical properties provides attractive resources for the development of functional optoelectronic devices based on a single material.
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to absorb sufficient light to maintain high photoresponsivity and reduce the dark current. However, this will limit the optoelectronic integration density. Through spatially resolved photocurrent investigation, we find that the photocurrent in metal-semiconductor-metal (MSM) photodetectors based on layered GaSe is mainly generated from the photoexcited carriers close to the metal-GaSe interface and the photocurrent active region is always close to the Schottky barrier with higher electrical potential. The photoresponsivity monotonically increases with shrinking the spacing distance before the direct tunneling happen, which was significantly enhanced up to 5,000 AW-1 for the bottom contacted device at bias voltage 8 V and wavelength of 410 nm. It is more than 1,700-fold improvement over the previously reported results. Besides the systematically experimental investigation of the dependence of the photoresponsivity on the spacing distance for both the bottom and top contacted MSM photodetectors, a theoretical model has also been developed to well explain the photoresponsivity for these two types of device configurations. Our findings realize shrinking the spacing distance and improving the performance of 2D semiconductor based MSM photodetectors simultaneously, which could pave the way for future high density integration of 2D semiconductor optoelectronics with high performances.
The specific topology of the line centered square lattice (known also as the Lieb lattice) induces remarkable spectral properties as the macroscopically degenerated zero energy flat band, the Dirac cone in the low energy spectrum, and the peculiar Hofstadter-type spectrum in magnetic field. We study here the properties of the finite Lieb lattice with periodic and vanishing boundary conditions. We find out the behavior of the flat band induced by disorder and external magnetic and electric fields. We show that in the confined Lieb plaquette threaded by a perpendicular magnetic flux there are edge states with nontrivial behavior. The specific class of twisted edge states, which have alternating chirality, are sensitive to disorder and do not support IQHE, but contribute to the longitudinal resistance. The symmetry of the transmittance matrix in the energy range where these states are located is revealed. The diamagnetic moments of the bulk and edge states in the Dirac-Landau domain, and also of the flat states in crossed magnetic and electric fields are shown.
The dispersion properties of exciton polaritons in multiple-quantum-well based resonant photonic crystals are studied. In the case of structures with an elementary cell possessing a mirror symmetry with respect to its center, a powerful analytical method for deriving and analyzing dispersion laws of the respective normal modes is developed. The method is used to analyze band structure and dispersion properties of several types of resonant photonic crystals, which would not submit to analytical treatment by other approaches. These systems include multiple quantum well structures with an arbitrary periodic modulation of the dielectric function and structures with a complex elementary cell. Special attention was paid to determining conditions for superradiance (Bragg resonance) in these structures, and to the properties of the polariton stop band in the case when this condition is fulfilled (Bragg structures). The dependence of the band structure on the angle of propagation, the polarization of the wave, and the effects due to exciton homogeneous and inhomogeneous broadenings are considered, as well as dispersion properties of excitations in near-Bragg structures.