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Register a new userA Parity-Protected Superconductor-Semiconductor Qubit
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Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by two such junctions, gate-tuned into balance and frustrated by a half-quantum of applied flux, yields a cos(2{phi}) Josephson element, reflecting coherent transport of pairs of Cooper pairs. We demonstrate that relaxation of the qubit can be suppressed tenfold by tuning into the protected regime.
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We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device (gatemon) is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (0.8 {mu}s) and dephasing times (1 {mu}s), exceeding gate operation times by two orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces crosstalk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.
We evaluate the rates of energy and phase relaxation of a superconducting qubit caused by stray photons with energy exceeding the threshold for breaking a Cooper pair. All channels of relaxation within this mechanism are associated with the change in the charge parity of the qubit, enabling the separation of the photon-assisted processes from other contributions to the relaxation rates. Among the signatures of the new mechanism is the same order of rates of the transitions in which a qubit looses or gains energy.
Quasiparticle excitations can compromise the performance of superconducting devices, causing high frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics have been studied in detail in metallic superconductors but remain relatively unexplored in semiconductor-superconductor structures, which are now being intensely pursued in the context of topological superconductivity. To this end, we introduce a new physical system comprised of a gate-confined semiconductor nanowire with an epitaxially grown superconductor layer, yielding an isolated, proximitized nanowire segment. We identify Andreev-like bound states in the semiconductor via bias spectroscopy, determine the characteristic temperatures and magnetic fields for quasiparticle excitations, and extract a parity lifetime (poisoning time) of the bound state in the semiconductor exceeding 10 ms.
The question whether the mixed phase of a gapless superconductor can support a Landau level is a celebrated problem in the context of textit{d}-wave superconductivity, with a negative answer: The scattering of the subgap excitations (massless Dirac fermions) by the vortex lattice obscures the Landau level quantization. Here we show that the same question has a positive answer for a Weyl superconductor: The chirality of the Weyl fermions protects the zeroth Landau level by means of a topological index theorem. As a result, the heat conductance parallel to the magnetic field has the universal value $G=tfrac{1}{2}g_0 Phi/Phi_0$, with $Phi$ the magnetic flux through the system, $Phi_0$ the superconducting flux quantum, and $g_0$ the thermal conductance quantum.
We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the general relation, S_V=2eIR^2coth(eV/2kT), for two voltage regions in which this expression reduces to its thermal and shot noise limits. The noise enhancement is explained by the presence of large charge quanta, with effective charge q*=(1+2Delta/eV)e, that generate a noise spectrum S_V=2q*IR^2, as predicted in Phys. Rev. Lett. 76, 3814 (1996). These charge quanta result from multiple Andreev reflections at each junction interface, which are also responsible for the subharmonic gap structure observed in the voltage dependence of the junctions conductance.
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