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Register a new userHot-Carrier Separation in Heterostructure Nanowires observed by Electron-Beam Induced Current
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The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation such as: a high degree of control and flexibility in heterostructure-based band engineering, increased hot-carrier temperatures compared to bulk, and a geometry well suited for local control of light absorption. Indeed, InAs nanowires with a short InP energy barrier have been observed to produce electric power under global illumination, with an open-circuit voltage exceeding the Shockley-Queisser limit. To understand this behaviour in more detail, it is necessary to maintain control over the precise location of electron-hole pair-generation in the nanowire. In this work we perform electron-beam induced current measurements with high spatial resolution, and demonstrate the role of the InP barrier in extracting energetic electrons. We interprete the results in terms of hot-carrier separation, and extract estimates of the hot carrier mean free path.
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Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often results from the exposure to the ion beam, motivating the search for a means to achieve similar structures with a beam of electrons instead of ions. This has so far remained an experimental challenge. We report the fabrication of superconducting tungsten nanowires by electron-beam-induced-deposition, with critical temperature of 2.0 K and critical magnetic field of 3.7 T, and compare them with superconducting wires made with ions. This work opens up new possibilities for the realization of nanoscale superconducting devices, without the requirement of an ion beam column.
We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatures leading to strong hot carrier effects.
Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron-hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron-hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We thus focus our analysis on the internal operation of the hot-carrier solar cell itself, and in this work do not consider the photon-mediated coupling to the sun. After deriving an expression for the voltage of a hot-carrier solar cell valid under conditions of both reversible and irreversible electrical operation, we identify separate contributions to the voltage from the thermoelectric effect and the photovoltaic effect. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. Our results help explore the fundamental limitations of hot-carrier solar cells, and provide a first step towards providing experimentalists with a guide to the optimal configuration of devices.
We demonstrate the use of individual magnetic nanowires (NWs), grown by focused electron beam induced deposition (FEBID), as scanning magnetic force sensors. Measurements of their mechanical susceptibility, thermal motion, and magnetic response show that the NWs posses high-quality flexural mechanical modes and a strong remanent magnetization pointing along their long axis. Together, these properties make the NWs excellent sensors of weak magnetic field patterns, as confirmed by calibration measurements on a micron-sized current-carrying wire and magnetic scanning probe images of a permalloy disk. The flexibility of FEBID in terms of the composition, geometry, and growth location of the resulting NWs, makes it ideal for fabricating scanning probes specifically designed for imaging subtle patterns of magnetization or current density.
Hot-carrier cooling (HCC) in metal halide perovskites in the high-density regime is significantly slower compared to conventional semiconductors. This effect is commonly attributed to a hot-phonon bottleneck but the influence of the lattice properties on the HCC behaviour is poorly understood. Using pressure-dependent transient absorption spectroscopy (fs-TAS) we find that at an excitation density below Mott transition, pressure does not affect the HCC. On the contrary, above Mott transition, HCC in methylammonium lead iodide (MAPbI3) is around two times as fast at 0.3 GPa compared to ambient pressure. Our electron-phonon coupling calculations reveal about two times stronger electron-phonon coupling for the inorganic cage mode at 0.3 GPa. However, our experiments reveal that pressure promotes faster HCC only above Mott transition. Altogether, these findings suggest a change in the nature of excited carriers in the high-density regime, providing insights on the electronic behavior of devices operating at such high charge-carrier density.
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