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Metallic superlattices where the magnetization vectors in the adjacent ferromagnetic layers are antiferromagnetically coupled by the interlayer exchange coupling through nonmagnetic spacer layers are systems available for the systematic study on antiferromagnetic (AF) spintronics. As a candidate of nonmagnetic spacer layer material exhibiting remarkable spin Hall effect, which is essential to achieve spin-orbit torque switching, we selected the Ir-doped Cu in this study. The AF-coupling for the Co / Cu$_{95}$Ir$_{5}$ / Co was investigated, and was compared with those for the Co / Cu / Co and Co / Ir / Co. The maximum magnitude of AF-coupling strength was obtained to be 0.39 mJ/m$^{2}$ at the Cu$_{95}$Ir$_{5}$ thickness of about 0.75 nm. Furthermore, we found a large spin Hall angle of Cu$_{95}$Ir$_{5}$ in Co / Cu$_{95}$Ir$_{5}$ bilayers by carrying out spin Hall magnetoresistance and harmonic Hall voltage measurements, which are estimated to be 3 ~ 4 %. Our experimental results clearly indicate that Cu$_{95}$Ir$_{5}$ is a nonmagnetic spacer layer allowing us to achieve moderately strong AF-coupling and to generate appreciable spin-orbit torque via the spin Hall effect.
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Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize the phase change material VO2 as a spacer layer to regulate the interlayer exchange coupling between ferromagnetic layers with perpendicular magnetic anisotropy. The successful growth of ultra-thin (several nanometres) VO2 films is realized by sputtering at room temperature, which further enables the fabrication of [Pt/Co]2/VO2/[Co/Pt]2 multilayers with distinct interfaces. Such a magnetic multilayer exhibits an evolution from antiferromagnetic coupling to ferromagnetic coupling as the VO2 undergoes a phase change. The underlying mechanism originates from the change in the electronic structure of the spacer layer from an insulating to a metallic state. As a demonstration of phase change spintronics, this work may reveal the great potential of material innovations for next-generation spintronics.
For epitaxial trilayers of the magnetic rare-earth metals Gd and Tb, exchange coupled through a non-magnetic Y spacer layer, element-specific hysteresis loops were recorded by the x-ray magneto-optical Kerr effect at the rare-earth $M_5$ thresholds. This allowed us to quantitatively determine the strength of interlayer exchange coupling (IEC). In addition to the expected oscillatory behavior as a function of spacer-layer thickness $d_Y$, a temperature-induced sign reversal of IEC was observed for constant $d_Y$, arising from magnetization-dependent electron reflectivities at the magnetic interfaces.
Interlayer exchange couplings were examined for Co2FeAl0.5Si0.5(CFAS)/Cr/CFAS trilayered films grown on MgO (001) single crystal and thermally oxidized Si substrates. The films were (001) epitaxial on MgO and (110) textured polycrystalline on SiO2. Strong exchange couplings were observed for the films with the 1.5 nm thick Cr spacer layer. A 90 degree coupling is dominant in the (001) epitaxial film. In contrast, an antiparallel coupling exists in the polycrystalline one. The relationship of interlayer couplings with the structure is discussed.
Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer thickness may lead to novel device applications, although its origin remains poorly understood, and generally attributed to quantum confinement effect. In this work, we demonstrate via first-principles calculations that strong interlayer coupling may be mainly responsible for this phenomenon, especially in the fewer-layer region, and it could also be an essential factor influencing other material properties of {beta}-InSe and {gamma}-InSe. Existence of strong interlayer coupling manifests itself in three aspects: (i) indirect-to-direct band gap transitions with increasing layer thickness; (ii) fan-like frequency diagrams of the shear and breathing modes of few-layer flakes; (iii) strong layer-dependent carrier mobilities. Our results indicate that multiple-layer InSe may be deserving of attention from FET-based technologies and also an ideal system to study interlayer coupling, possibly inherent in other 2D materials.
We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3 repeats of the unit structure. As the system exhibits oscillatory interlayer exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of films when the Co layers are coupled ferromagnetically and antiferromagnetically. SOT is evaluated using current induced shift of the anomalous Hall resistance hysteresis loops. A relatively thick Pt layer, serving as a seed layer to the multilayer, is used to generate spin current via the spin Hall effect. In the absence of antiferromagnetic coupling, the SOT is constant against the applied current density and the corresponding spin torque efficiency (i.e. the effective spin Hall angle) is $sim$0.09, in agreement with previous reports. In contrast, for films with antiferromagnetic coupling, the SOT increases with the applied current density and eventually saturates. The SOT at saturation is a factor of $sim$15 larger than that without the antiferromagnetic coupling. The spin torque efficiency is $sim$5 times larger if we assume the net total magnetization is reduced by a factor of 3 due to the antiferromagnetic coupling. Model calculations based on the Landau Lifshitz Gilbert equation show that the presence of antiferromagnetic coupling can increase the SOT but the degree of enhancement is limited, in this case, to a factor of 1.2-1.4. We thus consider there are other sources of SOT, possibly at the interfaces, which may account for the highly efficient SOT in the uncompensated synthetic anti-ferromagnet (SAF) multilayers.
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