Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userLarge dispersive interaction between a CMOS double quantum dot and microwave photons
87
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2pi) = 204 pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $alpha=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_text{r}=560~Omega$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems.
rate research
Read More
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circuits. Here we demonstrate the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor for control of the readout via gate-based dispersive sensing using a lumped element $LC$ resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully-depleted silicon-on-insulator technology. We obtain a charge sensitivity of $delta q=165, mu e mathrm{Hz}^{-1/2}$ when the quantum dot readout is enabled by the control FET. Additionally, we observe a single-electron retention time of the order of a second when storing a single-electron charge on the quantum dot at milli-Kelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive qubit readout in CMOS technology opening the path for the development of an all-silicon quantum-classical processor.
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T.
Quantum coherence in solid-state systems has been demonstrated in superconducting circuits and in semiconductor quantum dots. This has paved the way to investigate solid-state systems for quantum information processing with the potential benefit of scalability compared to other systems based on atoms, ions and photons. Coherent coupling of superconducting circuits to microwave photons, circuit quantum electrodynamics (QED), has opened up new research directions and enabled long distance coupling of qubits. Here we demonstrate how the electromagnetic field of a superconducting microwave resonator can be coupled to a semiconductor double quantum dot. The charge stability diagram of the double dot, typically measured by direct current (DC) transport techniques, is investigated via dispersive frequency shifts of the coupled resonator. This hybrid all-solid-state approach offers the potential to coherently couple multiple quantum dot and superconducting qubits together on one chip, and offers a method for high resolution spectroscopy of semiconductor quantum structures.
We investigate the non-classical states of light that emerge in a microwave resonator coupled to a periodically-driven electron in a nanowire double quantum dot (DQD). Under certain drive configurations, we find that the resonator approaches a thermal state at the temperature of the surrounding substrate with a chemical potential given by a harmonic of the drive frequency. Away from these thermal regions we find regions of gain and loss, where the system can lase, or regions where the DQD acts as a single-photon source. These effects are observable in current devices and have broad utility for quantum optics with microwave photons.
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
