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Register a new userCMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration
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Coherent light sources in silicon photonics are the long-sought holy grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain engineering and nonlinear process, are technologically demanding. Here, we demonstrate a hybrid lasing device composing of perovskite nanocrystals and silicon nitride nanobeam cavity. We fabricate SiN photonic crystal naonobeam cavities on a solid substrate with significantly improved thermal and mechanical stabilities compared to conventional suspended ones. In addition, adding a PMMA-encapsulation layer on top of the SiN can significantly boost the Q-factor of the cavity mode. By dispersing perovskite nanocrystals as emitters in the PMMA layer, we obtained high-performance coherent emissions in terms of lasing threshold, linewidth and mode volumes. Our work offers a compelling way of creating solution-processed active integrated photonic devices based on the mature platform of silicon photonics for applications in optical information science and photonic quantum technology.
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Implementing optical-frequency combs with integrated photonics will enable wider use of precision timing signals.Here, we explore the generation of an octave-span, Kerr-microresonator frequency comb, using hybrid integration ofan InP distributed-feedback laser and a SiN photonic-integrated circuit. We demonstrate electrically pumped and fiber-packaged prototype systems, enabled by self-injection locking. This direct integration of a laser and a microresonatorcircuit without previously used intervening elements, like optical modulators and isolators, necessitates understand-ing self-injection-locking dynamics with octave-span Kerr solitons. In particular, system architectures must adjust tothe strong coupling of microresonator back-scattering and laser-microresonator frequency detuning that we uncoverhere. Our work illustrates critical considerations towards realizing a self-referenced frequency comb with integratedphotonics.
We report an all-optical radio-frequency (RF) spectrum analyzer with a bandwidth greater than 5 terahertz (THz), based on a 50-cm long spiral waveguide in a CMOS-compatible high-index doped silica platform. By carefully mapping out the dispersion profile of the waveguides for different thicknesses, we identify the optimal design to achieve near zero dispersion in the C-band. To demonstrate the capability of the RF spectrum analyzer, we measure the optical output of a femtosecond fiber laser with an ultrafast optical RF spectrum in the terahertz regime.
Recent advances in photonic integrated circuits (PICs) have enabled a new generation of programmable many-mode interferometers (PMMIs) realized by cascaded Mach Zehnder Interferometers (MZIs) capable of universal linear-optical transformations on N input-output optical modes. PMMIs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, PMMI implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here, we introduce a large-scale PMMI platform, based on a 200 mm CMOS process, that uses aluminum nitride (AlN) piezo-optomechanical actuators coupled to silicon nitride (SiN) waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible to near-infrared wavelengths. Moreover, the vanishingly low holding-power consumption of the piezo-actuators enables these PICs to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.
Higher-order soliton dynamics, specifically soliton compression and fission, underpin crucial applications in ultrafast optics, sensing, communications, and signal processing. Bragg solitons exploit the strong dispersive properties of periodic media near the photonic band edge, enabling soliton dynamics to occur on chip-scale propagation distances and opening avenues to harness soliton compression and fission in integrated photonic platforms. However, implementation in CMOS-compatible platforms has been hindered by the strong nonlinear loss that dominates the propagation of high-intensity pulses in silicon and the low-optical nonlinearity of traditional silicon nitride. Here, we present CMOS-compatible, on-chip Bragg solitons, with the largest soliton-effect pulse compression to date with a factor of x5.7, along with the first time-resolved measurements of soliton fission on a CMOS-compatible platform. These observations were enabled by the combination of unique cladding-modulated Bragg grating design, the high nonlinearity and negligible nonlinear loss of compositionally engineered ultra-silicon-rich nitride (USRN: Si7N3).
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