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Register a new userGrowth and transport properties of Mg3X2 (X = Sb, Bi) single crystals
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The discovery of high thermoelectric performance in n-type polycrystalline Mg3(Sb,Bi)2 based Zintl compounds has ignited intensive research interest. However, some fundamental questions concerning the anisotropic transport properties and the origin of intrinsically low thermal conductivity are still elusive, requiring the investigation of single crystals. In this work, high-quality p-type Mg3Sb2 and Mg3Bi2 single crystals have been grown by using a self-flux method. The electrical resistivity r{ho} of Mg3Bi2 single crystal displays an anisotropy with r{ho} in-plane twice larger than out-of-plane. The low-temperature heat capacity and lattice thermal conductivity of Mg3Sb2 and Mg3Bi2 single crystals have been investigated by using the Debye-Callaway model, from which the existence of low-lying vibration mode could be concluded. Large Gruneisen parameters and strong anharmonicity are found responsible for the intrinsically low thermal conductivity. Moreover, grain boundary scattering does not contribute significantly to suppress the lattice thermal conductivity of polycrystalline Mg3Sb2. Our results provide insights into the intrinsic transport properties of Mg3X2 and could pave a way to realize enhanced thermoelectric performance in single-crystalline Mg3X2-based Zintl compounds.
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Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($sim10^{19}$ cm$^{-3}$) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi$_2$Se$_3$ single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.
We found that the electronic transport property of SnSe single crystals was sensitive to oxygen content. Semiconducting SnSe single crystals were obtained by using Sn of grain form as a starting material while powder Sn resulted in metallic SnSe. X-ray photoelectron spectroscopy analysis revealed that the surfaces of raw Sn were oxidized, where the volume fraction was relatively low in grain Sn. This demonstrates that contamination of oxygen causes metallic behavior in grown SnSe single crystals.
Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$leq$x$leq$1.0. The influence of Fe on the structural, electronic, and magnetic properties was studied and compared to that expected from density functional theory. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and X-ray diffraction. Using in-situ X-ray photoelectron spectroscopy, only small changes in the valence band are detected for x$leq$0.5. For films with x$geq$0.05, ferromagnetism is observed in SQUID magnetometry with a saturation magnetization that scales linearly with Fe content. A dramatic decrease in the magnetic moment per formula unit occurs when the Fe is substitutionally alloyed on the Co site indicating a strong dependence on the magnetic moment with site occupancy. A crossover from both in-plane and out-of-plane magnetic moments to only in-plane moment occurs for higher concentrations of Fe. Ferromagnetic resonance indicates a transition from weak to strong interaction with a reduction in inhomogeneous broadening as Fe content is increased. Temperature-dependent transport reveals a semiconductor to metal transition with thermally activated behavior for x$leq$0.5. Anomalous Hall effect and large negative magnetoresistance (up to -18.5% at 100 kOe for x=0.3) are observed for higher Fe content films. Evidence of superparamagnetism for x=0.3 and x=0.2 suggests for moderate levels of Fe, demixing of the CoTi$_{1-x}$Fe$_x$Sb films into Fe rich and Fe deficient regions may be present. Atom probe tomography is used to examine the Fe distribution in a x=0.3 film. Statistical analysis reveals a nonhomogeneous distribution of Fe atoms throughout the film, which is used to explain the observed magnetic and electrical behavior.
In this letter, we report growth and characterization of bulk Bi2Se3 single crystals. The studied Bi2Se3 crystals are grown by self flux method through solid state reaction from high temperature (950C) melt of constituent elements and slow cooling (2C/hour). The resultant crystals are shiny and grown in [00l] direction, as evidenced from surface XRD. Detailed Reitveld analysis of PXRD (powder x-ray diffraction) of the crystals showed that these are crystallized in rhombohedral crystal structure with space group of R3m (D5) and the lattice parameters are a = 4.14(2)A, b = 4.14 (2) A and c = 28.7010(7) A. Temperature versus resistivity (R-T) plots revealed metallic conduction down to 2K, with typical room temperature resistivity (R300K) of around 0.53 mohm-cm and residual resistivity of 0.12 mohm-cm. Resistivity under magnetic field ] measurements exhibited large +Ve magneto resistance right from 2K to 200K. Isothermal magneto resistance [RH] measurements at 2K, 100K and 200K exhibited magneto resistance (MR) of up to 240, 130 and 60 percent respectively at 14 Tesla. Further the MR plots are non saturating and linear with field at all temperature. At 2K the MR plots showed clear quantum oscillations at above say 10 Tesla applied field. Also the Kohler plots i.e., were seen consolidating on one plot. Interestingly, the studied Bi2Se3 single crystal exhibited the Shubnikov-de Haas oscillations (SdH) at 2K under different applied magnetic fields ranging from 4Tesla to 14 Tesla
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