Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTwo-dimensional metallic ferroelectricity in PbTe monolayer by electrostatic doping
237
0
0.0
(
0
)
Authors
Tao Xu
Ask ChatGPT about the research
No Arabic abstract
Polar metals characterized by the simultaneous coexistence of ferroelectric distortions and metallicity have attracted tremendous attention. Developing such materials at low dimensions remains challenging since both conducting electrons and reduced dimensions are supposed to quench ferroelectricity. Here, based on first-principles calculations, we report the discovery of ferroelectric behavior in two-dimensional (2D) metallic materials with electrostatic doping, even though ferroelectricity is unconventional at the atomic scale. We reveal that PbTe monolayer is intrinsic ferroelectrics with pronounced out-of-plane electric polarization originated from its non-centrosymmetric buckled structure. The ferroelectric distortions can be preserved with carriers doping in the ferroelectric monolayer, which thus enables the doped PbTe monolayer to act as a 2D polar metal. With an effective Hamiltonian extracted from the parametrized energy space, we found that the elastic-polar mode interaction is of great importance for the existence of robust polar instability in the doped system. The application of this doping strategy is not specific to the present crystal, but is rather general to other 2D ferroelectrics to bring about the fascinating metallic ferroelectric properties. Our findings thus change conventional acknowledge in 2D materials and will facilitate the development of multifunctional material in low dimensions.
rate research
Read More
As the first well-documented example of the ferroelectric metal, LiOsO3 has received extensive research attention recently. Using density-functional calculations, we perform a systematic study for LiOsO3. We address the controversy about the depth of the double well in the potential surface, and propose that the ferroelectric transition is order-disorder like. Moreover, we unambiguously demonstrate that the electric screening in this compound is highly anisotropic, and there is still unscreened dipole-dipole interaction in one special direction which results in the long range ferroelectric order despite the metallic nature of LiOsO3.
The coexistence of ferroelectric and topological orders in two-dimensional (2D) atomic crystals allows non-volatile and switchable quantum spin Hall states. Here we offer a general design principle for 2D bilayer heterostructures that can host ferroelectricity and nontrivial band topology simultaneously using only topologically trivial building blocks. The built-in electric field arising from the out-of-plane polarization across the heterostrucuture enables a robust control of the band gap size and band inversion strength, which can be utilized to manipulate topological phase transitions. Using first-principles calculations, we demonstrate a series of bilayer heterostructures are 2D ferroelectric topological insulators (2DFETIs) characterized with a direct coupling between band topology and polarization state. We propose a few 2DFETI-based quantum electronics including domain-wall quantum circuits and topological memristor.
A class of materials known as ``ferroelectric metals was discussed theoretically by Anderson and Blount in 1965 [Phys. Rev. Lett. 14, 217 (1965)], but to date no examples of this class have been reported. Here we present measurements of the elastic moduli of Cd2Re2O7 through the 200 K cubic-to-tetragonal phase transition. A Landau analysis of the moduli reveals that the transition is consistent with Cd2Re2O7 being classified as a ``ferroelectric metal in the weaker sense described by Anderson and Blount (loss of a center of symmetry). First-principles calculations of the lattice instabilities indicate that the dominant lattice instability corresponds to a two-fold degenerate mode with Eu symmetry, and that motions of the O ions forming the O octahedra dominate the energetics of the transition.
The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to design the novel system is unclear and the feasible approach to achieve the coexistence of two parameter orders is absent. Here, we propose a general paradigm to design 2D ferroelectric topological insulators by sliding topological multilayers on the basis of first-principles calculations. Taking trilayer Bi2Te3 as a model system, we show that in the van der Waals multilayer based 2D topological insulators, the in-plane and out-of-plane ferroelectricity can be induced through a specific interlayer sliding, to enable the coexistence of ferroelectric and topological orders. The strong coupling of the order parameters renders the topological states sensitive to polarization flip, realizing non-volatile ferroelectric control of topological properties. The revealed design-guideline and ferroelectric-topological coupling not only are useful for the fundamental research of the coupled ferroelectric and topological physics in 2D lattices, but also enable novel applications in nanodevices.
Next-generation spintronic devices will benefit from low-dimensionality, ferromagnetism, and half-metallicity, possibly controlled by electric fields. We find these technologically-appealing features to be combined with an exotic microscopic origin of magnetism in doped CdOHCl, a van der Waals material from which 2D layers may be exfoliated. By means of first principles simulations, we predict homogeneous hole-doping to give rise to $p$-band magnetism in both the bulk and monolayer phases and interpret our findings in terms of Stoner instability: as the Fermi level is tuned via hole-doping through singularities in the 2D-like density of states, ferromagnetism develops with large saturation magnetization of 1 $mu_B$ per hole, leading to a half-metallic behaviour for layer carrier densities of the order of 10$^{14}$ cm$^{-2}$. Furthermore, we put forward electrostatic doping as an additional handle to induce magnetism in monolayers and bilayers of CdOHCl. Upon application of critical electric fields perpendicular to atomically-thin-films (as low as 0.2 V/$A{deg}$ and 0.5 V/$A{deg}$ in the bilayer and monolayer case, respectively), we envisage the emergence of a magnetic half-metallic state. The different behaviour of monolayer vs bilayer systems, as well as an observed asymmetric response to positive and negative electric fields in bilayers, are interpreted in terms of intrinsic polarity of CdOHCl atomic stacks, a distinctive feature of the material. In perspective, given the experimentally accessible magnitude of critical fields in bilayer of CdOHCl, one can envisage $p$ band magnetism to be exploited in miniaturized spintronic devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
