No Arabic abstract
The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working principle, there is a lack of fundamental understanding of its basic properties and expected performances, in particular when the device is driven out of equilibrium. To fill the current gap in understanding, we investigate the electrostatics and electronic transport of 2D lateral pn junctions. To do so we implement a physics-based simulator that selfconsistently solves the 2D Poissons equation coupled to the drift-diffusion and continuity equations. Notably, the simulator takes into account the strong influence of the out of plane electric field through the surrounding dielectric, capturing the weak screening of charge carriers. Supported by simulations, we propose a Shockley-like equation for the ideal current voltage characteristics, in full analogy to the bulk junction after defining an effective depletion layer (EDL). We also discuss the impact of recombination generation processes inside the EDL, which actually produce a significant deviation with respect to the ideal behavior, consistently with experimental data. Moreover, we analyze the capacitances and conductance of the 2D lateral pn junction. Based on its equivalent circuit we investigate its cut-off frequency targeting RF applications. To gain deeper insight into the role played by material dimensionality, we benchmark the performances of single-layer MoS2 (2D) lateral pn junctions against those of the Si (3D) junction. Finally, a practical discussion on the short length 2D junction case together with the expected impact of interface states has been provided. Given the available list of 2D materials, this work opens the door to a wider exploration of material dependent performances.
We address the out-of-equilibrium thermodynamics of an isolated quantum system consisting of a cavity optomechanical device. We explore the dynamical response of the system when driven out of equilibrium by a sudden quench of the coupling parameter and compute analytically the full distribution of the work generated by the process. We consider linear and quadratic optomechanical coupling, where the cavity field is parametrically coupled to either the position or the square of the position of a mechanical oscillator, respectively. In the former case we find that the average work generated by the quench is zero, whilst the latter leads to a non-zero average value. Through fluctuations theorems we access the most relevant thermodynamical figures of merit, such as the free energy difference and the amount of irreversible work generated. We thus provide a full characterization of the out-of-equilibrium thermodynamics in the quantum regime for nonlinearly coupled bosonic modes. Our study is the first due step towards the construction and full quantum analysis of an optomechanical machine working fully out of equilibrium.
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanical exfoliation process, which is described in detail, is similar to that of graphene and other 2D materials. Atomic force microscopy (AFM) scans of the exfoliated b{eta}-Ga2O3 flakes show very smooth surfaces with average roughness of 0.647 nm and transmission electron microscopy (TEM) scans reveal flat, clean interfaces between the b{eta}-Ga2O3 flakes and p-GaN. The device showed a rectification ratio around 541.3 (V+5/V-5). Diode performance improved over the temperature range of 25{deg}C and 200{deg}C, leading to an unintentional donor activation energy of 135 meV. As the thickness of exfoliated b{eta}-Ga2O3 increases, ideality factors decrease as do the diode turn on voltages, tending toward an ideal threshold voltage of 3.2 V as determined by simulation. This investigation can help increase study of novel devices between mechanically exfoliated b{eta}-Ga2O3 and other materials.
2D bismuth oxyselenide (Bi2O2Se) with high electron mobility shows great potential for nanoelectronics. Although in-plane properties of Bi2O2Se have been widely studied, its out-ofplane electrical transport behavior remains elusive, despite its importance in fabricating devices with new functionality and high integration density. Here, we study the out-of-plane electrical properties of 2D Bi2O2Se at nanoscale by conductive atomic force microscope. We find that hillocks with tunable heights and sizes are formed on Bi2O2Se after applying vertical electrical field. Intriguingly, such hillocks are conductive in vertical direction, resulting in a previously unknown out-of-plane resistance switching in thick Bi2O2Se flakes while ohmic conductive characteristic in thin ones. Furthermore, we observe the transformation from bipolar to stable unipolar conduction in thick Bi2O2Se flake possessing such hillocks, suggesting its potential to function as a selector in vertical devices. Our work reveals unique out-of-plane transport behavior of 2D Bi2O2Se, providing the basis for fabricating vertical devices based on this emerging 2D material.
In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.
We calculate the conductances of a three-way junction of spinless Luttinger-liquid wires as functions of bias voltages applied to three independent Fermi-liquid reservoirs. In particular, we consider the setup that is characteristic of a tunneling experiment, in which the strength of electron-electron interactions in one of the arms of the junction (tunneling tip) is different from that in the other two arms (which together form a main wire). The scaling dependence of the two independent conductances on bias voltages is determined within a fermionic renormalization-group approach in the limit of weak interactions. The solution shows that, in general, the conductances scale with the bias voltages in an essentially different way compared to their scaling with the temperature $T$. Specifically, unlike in the two-terminal setup, the nonlinear conductances cannot be generically obtained from the linear ones by simply replacing $T$ with the corresponding bias voltage or the largest one. Remarkably, a finite tunneling bias voltage prevents the interaction-induced breakup of the main wire into two disconnected pieces in the limit of zero $T$ and a zero source-drain voltage.