The analog nature of computing in Memristive crossbars poses significant issues due to various non-idealities such as: parasitic resistances, non-linear I-V characteristics of the device etc. The non-idealities can have a detrimental impact on the functionality i.e. computational accuracy of crossbars. Past works have explored modeling the non-idealities using analytical techniques. However, several non-idealities have data dependent behavior. This can not be captured using analytical (non data-dependent) models thereby, limiting their suitability in predicting application accuracy. To address this, we propose a Generalized Approach to Emulating Non-Ideality in Memristive Crossbars using Neural Networks (GENIEx), which accurately captures the data-dependent nature of non-idealities. We perform extensive HSPICE simulations of crossbars with different voltage and conductance combinations. Following that, we train a neural network to learn the transfer characteristics of the non-ideal crossbar. Next, we build a functional simulator which includes key architectural facets such as textit{tiling}, and textit{bit-slicing} to analyze the impact of non-idealities on the classification accuracy of large-scale neural networks. We show that GENIEx achieves textit{low} root mean square errors (RMSE) of $0.25$ and $0.7$ for low and high voltages, respectively, compared to HSPICE. Additionally, the GENIEx errors are $7times$ and $12.8times$ better than an analytical model which can only capture the linear non-idealities. Further, using the functional simulator and GENIEx, we demonstrate that an analytical model can overestimate the degradation in classification accuracy by $ge 10%$ on CIFAR-100 and $3.7%$ on ImageNet datasets compared to GENIEx.
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