No Arabic abstract
The perovskite oxides are known to be susceptible to structural distortions over a long wavelength when compared to their parent cubic structures. From an ab initio simulation perspective, this requires accurate calculations including many thousands of atoms; a task well beyond the remit of traditional plane wave-based density functional theory (DFT). We suggest that this void can be filled using the methodology implemented in the large-scale DFT code, CONQUEST, using a local pseudoatomic orbital (PAO) basis. Whilst this basis has been tested before for some structural and energetic properties, none have treated the most fundamental quantity to the theory, the charge density $n(mathbf{r})$ itself. An accurate description of $n(mathbf{r})$ is vital to the perovskite oxides due to the crucial role played by short-range restoring forces (characterised by bond covalency) and long range coulomb forces as suggested by the soft-mode theory of Cochran and Anderson. We find that modestly sized basis sets of PAOs can reproduce the plane-wave charge density to a total integrated error of better than 0.5% and provide Bader partitioned ionic charges, volumes and average charge densities to similar degree of accuracy. Further, the multi-mode antiferroelectric distortion of PbZrO$_3$ and its associated energetics are reproduced by better than 99% when compared to plane-waves. This work suggests that electronic structure calculations using efficient and compact basis sets of pseudoatomic orbitals can achieve the same accuracy as high cutoff energy plane-wave calculations. When paired with the CONQUEST code, calculations with high electronic and structural accuracy can now be performed on many thousands of atoms, even on systems as delicate as the perovskite oxides.
We propose the concept of hybridization-switching induced Mott transition which is relevant to a broad class of ABO$_3$ perovskite materials including BiNiO$_3$ and PbCrO$_3$ which feature extended $6s$ orbitals on the A-site cation (Bi or Pb), and A-O covalency induced ligand holes. Using {it ab initio} electronic structure and slave rotor theory calculations, we show that such systems exhibit a breathing phonon driven A-site to oxygen hybridization-wave instability which conspires with strong correlations on the B-site transition metal ion (Ni or Cr) to induce a Mott insulator. These Mott insulators with active A-site orbitals are shown to undergo a pressure induced insulator to metal transition accompanied by a colossal volume collapse due to ligand hybridization switching.
Motivated by the recently proposed parallel orbital-updating approach in real space method, we propose a parallel orbital-updating based plane-wave basis method for electronic structure calculations, for solving the corresponding eigenvalue problems. In addition, we propose two new modified parallel orbital-updating methods. Compared to the traditional plane-wave methods, our methods allow for two-level parallelization, which is particularly interesting for large scale parallelization. Numerical experiments show that these new methods are more reliable and efficient for large scale calculations on modern supercomputers
We investigated the electronic structure of the SrTiO$_3$/LaAlO$_3$ superlattice (SL) by resonant soft x-ray scattering. The (003) peak, which is forbidden for our ideal SL structure, was observed at all photon energies, indicating reconstruction at the interface. From the peak position analyses taking into account the effects of refraction, we obtained evidence for electronic reconstruction of Ti 3d and O $2p$ states at the interface. From reflectivity analyses, we concluded that the AlO$_2$/LaO/TiO$_2$/SrO and the TiO$_2$/SrO/AlO$_2$/LaO interfaces are quite different, leading to highly asymmetric properties.
We explore mechanisms of orbital order decay in doped Mott insulators $R_{1-x}$(Sr,Ca)$_x$VO$_3$ ($R=,$Pr,Y,La) caused by charged (Sr,Ca) defects. Our unrestricted Hartree-Fock analysis focuses on the combined effect of random, charged impurities and associated doped holes up to $x=0.5$. The study is based on a generalized multi-band Hubbard model for the relevant vanadium $t_{2g}$ electrons, and includes the long-range (i) Coulomb potentials of defects and (ii) electron-electron interactions. We show that the rotation of occupied $t_{2g}$ orbitals, induced by the electric field of defects, is a very efficient perturbation that largely controls the suppression of orbital order in these compounds. We investigate the inverse participation number spectra and find that electron states remain localized on few sites even in the regime where orbital order is collapsed. From the change of kinetic and superexchange energy we can conclude that the motion of doped holes, which is the dominant effect for the reduction of magnetic order in high-$T_c$ compounds, is of secondary importance here.
I study the structural and magnetic instabilities in LaNiO$_3$ using density functional theory calculations. From the non-spin-polarized structural relaxations, I find that several structures with different Glazer tilts lie close in energy. The $Pnma$ structure is marginally favored compared to the $Roverline{3}c$ structure in my calculations, suggesting the presence of finite-temperature structural fluctuations and a possible proximity to a structural quantum critical point. In the spin-polarized relaxations, both structures exhibit the $uparrow!!0!!downarrow!!0$ antiferromagnetic ordering with a rock-salt arrangement of the octahedral breathing distortions. The energy gain due to the breathing distortions is larger than that due to the antiferromagnetic ordering. These phases are semimetallic with small three-dimensional Fermi pockets, which is largely consistent with the recent observation of the coexistence of antiferromagnetism and metallicity in LaNiO$_3$ single crystals by Li textit{et al.} [arXiv:1705.02589].