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We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb blockade regime is consistent with transport through a single level, and excited state transport through the dots was observed at temperatures up to 10 K. For adjacent charge states of a bilayer WSe$_2$ dot, magnetic field dependence of excited state energies was used to estimate $g$-factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe$_2$ for application as qubits.
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We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality quantum dots. The charge detector is based on a second quantum dot separated from the first dot by depletion underneath a 150 nm wide gate. We show that Coulomb resonances in the sensing dot are sensitive to individual charging events on the nearby quantum dot. The potential change due to single electron charging causes a step-like change (up to 77 %) in the current through the charge detector. Furthermore, the charging states of a quantum dot with tunable tunneling barriers and of coupled quantum dots can be detected.
Charged excitons, or X$^{pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X$^+$ and X$^-$ and the X$^-$ fine structure. We find in the charge neutral regime, the X$^0$ emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X$^0$ and an excited state of the X$^0$ are visible. In the $n$-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6~meV for X$^-$ is observed. We present a symmetry analysis of the different X$^+$ and X$^-$ trion states and results of the binding energy calculations. We compare the trion binding energy for the $n$-and $p$-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X$^+$ and X$^-$ trions as well as the fine structure of the X$^-$ state can be related to the short-range Coulomb exchange interaction between the charge carriers.
We investigate the steady-state out-of-plane spin diffusion in p-type bilayer WSe2 in the presence of the Rashba spin-orbit coupling and Hartree-Fock effective magnetic field. The out-of-plane components of the Rashba spin-orbit coupling serve as the opposite Zeeman-like fields in the two valleys. Together with the identical Hartree-Fock effective magnetic fields, different total effective magnetic field strengths in the two valleys are obtained. It is further revealed that due to the valley-dependent total effective magnetic field strength, similar (different) spin-diffusion lengths in the two valleys are observed at small (large) spin injection. Nevertheless, it is shown that the intervalley hole-phonon scattering can suppress the difference in the spin-diffusion lengths at large spin injection due to the spin-conserving intervalley charge transfers with the opposite transfer directions between spin-up and -down holes. Moreover, with a fixed large pure spin injection, we predict the build-up of a steady-state valley polarization during the spin diffusion with the maximum along the diffusion direction being capable of exceeding 1 %. It is revealed that the valley polarization arises from the induced quasi hot-hole Fermi distributions with different effective hot-hole temperatures between spin-up and -down holes during the spin diffusion, leading to the different intervalley charge transfer rates in the opposite transfer directions. Additionally, it is also shown that by increasing the injected spin polarization, the hole density or the impurity density, the larger valley polarization can be obtained.
Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these materials can be deterministically initialized via irradiation with circularly polarized light. Here, we investigate the ultrafast dynamics of such a valley polarization in monolayer tungsten diselenide by means of time-resolved Kerr reflectometry. The observed Kerr signal in our sample stems exclusively from charge-neutral excitons. Our findings support the picture of a fast decay of the valley polarization of bright excitons due to radiative recombination, intra-conduction-band spin-flip transitions, intervalley-scattering processes, and the formation of long-lived valley-polarized dark states.
We consider electrostatically coupled quantum dots in topological insulators, otherwise confined and gapped by a magnetic texture. By numerically solving the (2+1) Dirac equation for the wave packet dynamics, we extract the energy spectrum of the coupled dots as a function of bias-controlled coupling and an external perpendicular magnetic field. We show that the tunneling energy can be controlled to a large extent by the electrostatic barrier potential. Particularly interesting is the coupling via Klein tunneling through a resonant valence state of the barrier. The effective three-level system nicely maps to a model Hamiltonian, from which we extract the Klein coupling between the confined conduction and valence dots levels. For large enough magnetic fields Klein tunneling can be completely blocked due to the enhanced localization of the degenerate Landau levels formed in the quantum dots.
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