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Register a new userNon-invasive nanoscale potentiometry and ballistic transport in epigraphene nanoribbons
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The recent observation of non-classical electron transport regimes in two-dimensional materials has called for new high-resolution non-invasive techniques to locally probe electronic properties. We introduce a novel hybrid scanning probe technique to map the local resistance and electrochemical potential with nm- and $mu$V resolution, and we apply it to study epigraphene nanoribbons grown on the sidewalls of SiC substrate steps. Remarkably, the potential drop is non uniform along the ribbons, and $mu$m-long segments show no potential variation with distance. The potential maps are in excellent agreement with measurements of the local resistance. This reveals ballistic transport in ambient condition, compatible with micrometer-long room-temperature electronic mean free paths.
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The graphene edge state has long been predicted to be a zero energy, one-dimensional electronic waveguide mode that dominates transport in neutral graphene nanostructures, with potential application to graphene devices. However, its exceptional properties have been observed in only a few cases, each employing novel fabrication methods without a clear path to large-scale integration. We show here that interconnected edge-state networks can be produced using non-conventional facets of electronics grade silicon carbide wafers and scalable lithography, which cuts the epitaxial graphene and apparently fuses its edge atoms to the silicon carbide substrate. Measured epigraphene edge state (EGES) conduction is ballistic with mean free paths exceeding tens of microns, thousands of times greater than for the diffusive 2D bulk. It is essentially independent of temperature, decoupled from the bulk and substantially immune to disorder. Remarkably, EGES transport involves a non-degenerate conductance channel that is pinned at zero energy, yet it does not generate a Hall voltage, implying balanced electron and hole components. These properties, observed at all tested temperatures, magnetic fields, and charge densities, are not predicted by present theories, and point to a zero-energy spin one-half quasiparticle, composed of half an electron and a half a hole moving in opposite directions.
Despite the ubiquity of applications of heat transport across nanoscale interfaces, including integrated circuits, thermoelectrics, and nanotheranostics, an accurate description of phonon transport in these systems remains elusive. Here we present a theoretical and computational framework to describe phonon transport with position, momentum and scattering event resolution. We apply this framework to a single material spherical nanoparticle for which the multidimensional resolution offers insight into the physical origin of phonon thermalization, and length-scale dependent anisotropy of steady-state phonon distributions. We extend the formalism to handle interfaces explicitly and investigate the specific case of semi-coherent materials interfaces by computing the coupling between phonons and interfacial strain resulting from aperiodic array of misfit dislocations. Our framework quantitatively describes the thermal interface resistance within the technologically relevant Si-Ge heterostructures. In future, this formalism could provide new insight into coherent and driven phonon effects in nanoscale materials increasingly accessible via ultrafast, THz and near-field spectroscopies.
We work out a theory of the Coulomb drag current created under the ballistic transport regime in a one-dimensional nanowire by a ballistic non-Ohmic current in a nearby parallel nanowire. As in the Ohmic case, we predict sharp oscillation of the drag current as a function of gate voltage or the chemical potential of electrons. We study also dependence of the drag current on the voltage V across the driving wire. For relatively large values of V the drag current is proportional to V^2.
We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regime the voltage of floating electrode always increases as a function of push-pull polarization. Such anomalous effect occurs for the symmetric device, provided the applied voltage is less than the Fermi energy in equilibrium.
We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is inversely proportional to the width. In this gap, electron is localized, and charge transport exhibits a transition between simple thermally activated behavior at higher temperatures and a variable range hopping at lower temperatures. By varying the geometric capacitance through the addition of top gates, we find that charging effects constitute a significant portion of the activation energy.
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