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Register a new userIsotropically conducting (hidden) quantum Hall stripe phases in a two-dimensional electron gas
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Quantum Hall stripe (QHS) phases, predicted by the Hartree-Fock theory, are manifested in GaAs-based two-dimensional electron gases as giant resistance anisotropies. Here, we predict a ``hidden QHS phase which exhibits emph{isotropic} resistivity whose value, determined by the density of states of QHS, is independent of the Landau index $N$ and is inversely proportional to the Drude conductivity at zero magnetic field. At high enough $N$, this phase yields to an Ando-Unemura-Coleridge-Zawadski-Sachrajda phase in which the resistivity is proportional to $1/N$ and to the ratio of quantum and transport lifetimes. Experimental observation of this border should allow one to find the quantum relaxation time.
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Quantum Hall stripe phases near half-integer filling factors $ u ge 9/2$ were predicted by Hartree-Fock (HF) theory and confirmed by discoveries of giant resistance anisotropies in high-mobility two-dimensional electron gases. A theory of such anisotropy was proposed by MacDonald and Fisher, although they used parameters whose dependencies on the filling factor, electron density, and mobility remained unspecified. Here, we fill this void by calculating the hard-to-easy resistivity ratio as a function of these three variables. Quantitative comparison with experiment yields very good agreement which we view as evidence for the plain vanilla smectic stripe HF phases.
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $ u = 1/3$) and spin-unpolarized ($ u = 2/5$) states is accompanied by a complicated series of hysteresis loops reminiscent of a classical ferromagnet. In correlation with the hysteresis, magnetoresistance can either grow or decay logarithmically in time with remarkable persistence and does not saturate. In contrast to the established models of relaxation, the relaxation rate exhibits an anomalous divergence as temperature is reduced. These results indicate the presence of novel two-dimensional ferromagnetism with a complicated magnetic domain dynamic.
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit interaction in a two-dimensional electron gas are present simultaneously. Surprisingly, even when the extrinsic mechanism is the dominant driving force for spin Hall currents, the amplitude of the spin Hall conductivity may be considerably tuned by varying the intrinsic spin-orbit coupling via a gate voltage. Furthermore we provide an explanation of the experimentally observed out-of-plane spin polarization in a (110) GaAs quantum well.
We study the coupled dynamics of spin and charge currents in a two-dimensional electron gas in the transport diffusive regime. For systems with inversion symmetry there are established relations between the spin Hall effect, the anomalous Hall effect and the inverse spin Hall effect. However, in two-dimensional electron gases of semiconductors like GaAs, inversion symmetry is broken so that the standard arguments do not apply. We demonstrate that in the presence of a Rashba type of spin-orbit coupling (broken structural inversion symmetry) the anomalous Hall effect, the spin Hall and inverse spin Hall effect are substantially different effects. Furthermore we discuss the inverse spin Hall effect for a two-dimensional electron gas with Rashba and Dresselhaus spin-orbit coupling; our results agree with a recent experiment.
Based on the Born-Oppemheimer approximation, we divide total electron Hamiltonian in a spinorbit coupled system into slow orbital motion and fast interband transition process. We find that the fast motion induces a gauge field on slow orbital motion, perpendicular to electron momentum, inducing a topological phase. From this general designing principle, we present a theory for generating artificial gauge field and topological phase in a conventional two-dimensional electron gas embedded in parabolically graded GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum wells with antidot lattices. By tuning the etching depth and period of antidot lattices, the band folding caused by superimposed potential leads to formation of minibands and band
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