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Register a new userBulk superconductivity induced by Se substitution in self-doped BiCh2-based compound CeOBiS2-xSex
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Added by
Yoshikazu Mizuguchi
Publication date
2020
fields
Physics
and research's language is
English
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We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x = 0.4 and 0.6, bulk superconducting transitions with a large shielding volume fraction were observed in magnetic susceptibility measurements; the highest transition temperature (Tc) was 3.0 K for x = 0.6. A superconductivity phase diagram of CeOBiS2-xSex was established based on Tc estimated from the electrical resistivity and magnetization measurements. The emergence of superconductivity in CeOBiS2-xSex was explained with two essential parameters of in-plane chemical pressure and carrier concentration, which systematically changed with increasing Se concentration.
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We have investigated Se substitution effect to superconductivity of an optimally-doped BiS2-based superconductor Eu0.5La0.5FBiS2. Eu0.5La0.5FBiS2-xSex samples with x = 0-1 were synthesized. With increasing x, in-plane chemical pressure is enhanced. For x = 0.6, 0.8, and 1, superconducting transitions with a large shielding volume fraction are observed in magnetic susceptibility measurements, and the highest Tc is 3.8 K for x = 0.8. From low-temperature electrical resistivity measurements, a zero-resistivity state is observed for all the samples, and the highest Tc is observed for x = 0.8. With increasing Se concentration, characteristics of electrical resistivity changes from semiconducting-like to metallic, suggesting that the emergence of bulk superconductivity is linked with the enhanced metallicity. A superconductivity phase diagram of the Eu0.5La0.5FBiS2-xSex superconductor is established. Temperature dependences of electrical resistivity show an anomalous two-step transition under high magnetic fields. Hence, the resistivity data are analyzed with assuming in-plane anisotropy of upper critical field.
We investigate the superconducting properties and possible nematic superconductivity of self-doped BiCh2-based (Ch: S, Se) superconductor CeOBiS1.7Se0.3 through the measurements of in-plane anisotropy of magnetoresistance. Single crystals of CeOBiS1.7Se0.3 were grown using a flux method. Single-crystal structural analysis revealed that the crystal structure at room temperature is tetragonal (P4/nmm). Bulk superconductivity with a transition temperature of 3.3 K was observed through electrical resistivity and magnetization measurements. Investigation of anisotropy of upper critical field suggested relatively low anisotropy in the crystal as compared to other BiCh2-based superconductors. In the superconducting states of CeOBiS1.7Se0.3, two-fold symmetric in-plane anisotropy of magnetoresistance was observed, which indicates the in-plane rotational symmetry breaking in the tetragonal structure and hence the possibility of nematic superconductivity in CeOBiS1.7Se0.3.
La2O2Bi2Pb2S6 is a layered Bi-based oxychalcogenide with a thick four-layer-type conducting layer. Although La2O2Bi2Pb2S6 is a structural analogue of La2O2Bi3AgS6, which is a superconductor, insulating behavior has been observed in La2O2Bi2Pb2S6 at low temperatures, and no superconductivity has been reported. Herein, we demonstrate superconductivity in La2O2Bi2Pb2S6-xSex via partial substitution of Se in the S sites. Owing to the Se doping, the normal state electrical resistivity of La2O2Bi2Pb2S6-xSex at low temperatures was dramatically suppressed, and superconductivity was observed at a transition temperature (Tc) of 1.15 K for x = 0.5. Tc increased with increasing Se concentration: Tc = 1.9 K for x = 1.0. The emergence of metallicity and superconductivity was explained via in-plane chemical pressure effects that can suppress local disorder and carrier localization, which are commonly observed in two-layer-type BiS2-based systems.
We synthesized Sr-doped $La_{0.85}Sr_{0.15}OFeAs$ sample with single phase, and systematically studied the effect of oxygen deficiency in the Sr-doped LaOFeAs system. It is found that substitution of Sr for La indeed induces the hole carrier evidenced by positive thermoelectric power (TEP), but no bulk superconductivity is observed. The superconductivity can be realized by annealing the as-grown sample in vacuum to produce the oxygen deficiency. With increasing the oxygen deficiency, the superconducting transition temperature ($T_c$) increases and maximum $T_c$ reaches about 26 K the same as that in La(O,F)FeAs. TEP dramatically changes from positive to negative in the nonsuperconducting as-grown sample to the superconducting samples with oxygen deficiency. While $R_H$ is always negative for all samples (even for Sr-doped as grown sample). It suggests that the $La_{0.85}Sr_{0.15}O_{1-delta}FeAs$ is still electron-type superconductor.
Bi2Te3 compound has been theoretically predicted (1) to be a topological insulator, and its topologically non-trivial surface state with a single Dirac cone has been observed in photoemission experiments (2). Here we report that superconductivity (Tc^~3K) can be induced in Bi2Te3 as-grown single crystal (with hole-carriers) via pressure. The first-principles calculations show that the electronic structure under pressure remains to be topologically nontrivial, and the Dirac-type surface states can be well distinguished from bulk states at corresponding Fermi level. The proximity effect between superconducting bulk states and Dirac-type surface state could generate Majorana fermions on the surface. We also discuss the possibility that the bulk state could be a topological superconductor.
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