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We theoretically study the Josephson current in Ising superconductor-half-metal-Ising superconductor junctions. By solving the Bogoliubov-de Gennes equations, the Josephson currents contributed by the discrete Andreev levels and the continuous spectrum are obtained. For very short junctions, because the direct tunneling of the Cooper pair dominates the Josephson current, the current-phase difference relation is independent of the magnetization direction, which is the same as the conventional superconductor-ferromagnet-superconductor junctions. On the other hand, when the length of the half-metal is similar to or greater than the superconducting coherence length, the spin-triplet Josephson effect occurs and dominates the Josephson current. In this case, the current-phase difference relations show the strong magnetoanisotropic behaviors with the period pi. When the magnetization direction points to the $pm$ z directions, the current is zero regardless of the phase difference. However, the current has a large value when the magnetization direction is parallel to the junction plane, which leads to a perfect switch effect of the Josephson current. Furthermore, we find that the long junctions can host both the 0 state and pi state, and the $0$-$pi$ transitions can be achieved with the change of the magnetization direction. The physical origins of the switch effect and $0$-$pi$ transitions are interpreted from the perspectives of the spin-triplet Andreev reflection, the Ising pairing order parameter and the Ginzburg-Landau type of free energy. In addition, the influences of the chemical potential, the magnetization magnitude, and the strength of the Ising spin-orbit coupling on the switch effect and $0$-$pi$ transitions are also investigated. Furthermore, the two-dimensional Josephson junctions are also investigated and we show that the spin-triplet Josephson effect can exist always.
We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical and quantum computing devices. We optimized the fabrication process of these junctions to achieve a homogeneous current transport, ending up with high-quality samples. Depending on the thickness of the ferromagnetic layer and on temperature, the SIFS junctions are in the ground state with a phase drop either 0 or $pi$. By using a ferromagnetic layer with variable step-like thickness along the junction, we obtained a so-called 0-$pi$ Josephson junction, in which 0 and $pi$ ground states compete with each other. At a certain temperature the 0 and $pi$ parts of the junction are perfectly symmetric, i.e. the absolute critical current densities are equal. In this case the degenerate ground state corresponds to a vortex of supercurrent circulating clock- or counterclockwise and creating a magnetic flux which carries a fraction of the magnetic flux quantum $Phi_0$.
We present experimental studies of static and dynamic properties of 0, pi and 0-pi superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions of small and intermediate length. In the underdamped limit these junctions exhibit a rich dynamical behavior such as resonant steps on the current-voltage characteristics. Varying the experimental conditions, zero field steps, Fiske steps and Shapiro steps are observed with a high resolution. A strong signature of the 0-pi Josephson junction is demonstrated by measuring the critical current as a function of two components (B_x, B_y) of an in-plane magnetic field. The experimental observation of a half-integer zero field step in 0-pi SIFS junctions is presented.
We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying ~6.7% of the magnetic flux quantum Phi_0. The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field.
We theoretically study the Josephson effect in a superconductor/normal metal/superconductor ({it S}/{it N}/{it S}) Josephson junction composed of $s$-wave {it S}s with {it N} which is sandwiched by two ferromagnetic insulators ({it F}s), forming a spin valve, in the vertical direction of the junction. We show that the 0-$pi$ transition of the Josephson critical current occurs with increasing the thickness of {it N} along the junction. This transition is due to the magnetic proximity effect (MPE) which induces ferromagnetic magnetization in the {it N}. Moreover, we find that, even for fixed thickness of {it N}, the proposed Josephson junction with the spin valve can be switched from $pi$ to 0 states and vice versa by varying the magnetization configuration (parallel or antiparallel) of two {it F}s. We also examine the effect of spin-orbit scattering on the Josephson critical current and argue that the 0-$pi$ transition found here can be experimentally observed within the current nanofabrication techniques, thus indicating a promising potential of this junction as a 0-$pi$ switching device operated reversibly with varying the magnetic configuration in the spin valve by, e.g., applying an external magnetic field. %with the magnetization configuration in the spin valve. Our results not only provide possible applications in superconducting electronics but also suggest the importance of a fundamental concept of MPE in nanostructures of multilayer {it N}/{it F} systems.
The physics of the $pi$ phase shift in ferromagnetic Josephson junctions may enable a range of applications for spin-electronic devices and quantum computing. We investigate transitions from ``0 to ``$pi$ states in Nb/Fe/Nb Josephson junctions by varying the Fe barrier thickness from 0.5 nm to 5.5 nm. From magnetic measurements we estimate for Fe a magnetic dead layer of about 1.1 nm. By fitting the characteristic voltage oscillations with existing theoretical models we extrapolate an exchange energy of 256 meV, a Fermi velocity of $1.98 times 10^5$ m/s and an electron mean free path of 6.2 nm, in agreement with other reported values. From the temperature dependence of the $I_CR_N$ product we show that its decay rate exhibits a nonmonotonic oscillatory behavior with the Fe barrier thickness.