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Register a new userControlling vertical magnetization shift by spin-orbit torque in ferromagnetic/antiferromagnetic/ferromagnetic heterostructure
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We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed after applying a single pulse 40 mA in perpendicular field of 2 kOe. Furthermore, the field-free SOT-induced variations of VMS and exchange bias is also observed, which would be related to the effective built-in out-of-plane field due to unequal upward and downward interfacial spin populations. The SOT-induced switched fraction of out-of-plane interfacial spins shows a linear dependence on relative VMS, indicating the number of uncompensated pinned spins are proportional to the switched interfacial spins. Our finding offers a comprehensive understanding for electrically manipulating interfacial spins of AFM materials.
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Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has been realized by several different approaches. However, the interfacial spin order of antiferromagnets is an important integral part of spintronic devices, thus the successful control of interfacial antiferromagnetic spins is urgently desired. Here, we report the high controllability of interfacial spins in antiferromagnetic / ferromagnetic / heavy metal heterostructure devices using spin-orbit torque (SOT) assisted by perpendicular or longitudinal magnetic fields. Switching of the interfacial spins from one to another direction through multiple intermediate states is demonstrated. The field-free SOT-induced switching of antiferromagnetic interfacial spins is also observed, which we attribute to the effective built-in out-of-plane field due to unequal upward and downward interfacial spin populations. Our work provides a precise way to modulate the interfacial spins at an antiferromagnet / ferromagnet interface via SOT, which will greatly promote innovative designs for next generation spintronic devices.
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt. Making use of the opposite spin current at the top and bottom surface of the middle Pt layer, magnetization of both Co layers can be switched oppositely by the spin-orbit torques with different critical switching currents. By changing the current pulse forms through the device, the four magnetic states memory was demonstrated. Our device provides a new idea for the design of low power and high density spin-orbit torque devices.
We use micromagnetic simulation to demonstrate layer-selective detection of magnetization directions from magnetic dots having two recording layers by using a spin-torque oscillator (STO) as a read device. This method is based on ferromagnetic resonance (FMR) excitation of recording-layer magnetizations by the microwave field from the STO. The FMR excitation affects the oscillation of the STO, which is utilized to sense the magnetization states in a recording layer. The recording layers are designed to have different FMR frequencies so that the FMR excitation is selectively induced by tuning the oscillation frequency of the STO. Since all magnetic layers interact with each other through dipolar fields, unnecessary interlayer interferences can occur, which are suppressed by designing magnetic properties of the layers. We move the STO over the magnetic dots, which models a read head moving over recording media, and show that changes in the STO oscillation occur on the one-nanosecond timescale.
We use time-resolved (TR) measurements based on the polar magneto-optical Kerr effect (MOKE) to study the magnetization dynamics excited by spin orbit torques in Py (Permalloy)/Pt and Ta/CoFeB bilayers. The analysis reveals that the field-like (FL) spin orbit torque (SOT) dominates the amplitude of the first oscillation cycle of the magnetization precession and the damping-like (DL) torque determines the final steady-state magnetization. In our bilayer samples, we have extracted the effective fields, hFL and hDL, of the two SOTs from the time-resolved magnetization oscillation spectrum. The extracted values are in good agreement with those extracted from time-integrated DCMOKE measurements, suggesting that the SOTs do not change at high frequencies. We also find that the amplitude ratio of the first oscillation to steady state is linearly proportional to the ratio hFL/hDL. The first oscillation amplitude is inversely proportional to, whereas the steady state value is independent of, the applied external field along the current direction.
We report the generation and detection of spin-orbit torque ferromagnetic resonance (STFMR) in micropatterned epitaxial Fe/Pt bilayers grown by molecular beam epitaxy. The magnetic field dependent measurements at an in-plane magnetic field angle of 45 degrees with respect to the microwave-current direction reveal the presence of two distinct voltage peaks indicative of a strong magnetic anisotropy. We show that STFMR can be employed to probe the underlying magnetic properties including the anisotropies in the Fe layer. We compare our STFMR results with broadband ferromagnetic resonance spectroscopy of the unpatterned bilayer thin films. The experimental STFMR measurements are interpreted using an analytical formalism and further confirmed using micromagnetic modeling, which shed light on the field-dependent magnetization alignment in the microstructures responsible for the STFMR rectification. Our results demonstrate a simple and efficient method for determining magnetic anisotropies in microstructures by means of rf spectroscopy.
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