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Register a new userStructural Stability and Optoelectronic Properties of Tetragonal MAPbI3 under Strain
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In recent years, organic-inorganic hybrid perovskites have attracted wide attention due to their excellent optoelectronic properties in the application of optoelectronic devices. In the manufacturing process of perovskite solar cells, perovskite films inevitably have residual stress caused by non-stoichiometry components and the external load. However, their effects on the structural stability and photovoltaic performance of perovskite solar cells are still not clear. In this work, we investigated the effects of external strain on the structural stability and optoelectronic properties of tetragonal MAPbI3 by using the first-principles calculations. We found that the migration barrier of I- ion increases in the presence of compressive strain and decreases with tensile strain, indicating that the compressive strain can enhance the structural stability of halide perovskites. In addition, the light absorption and electronic properties of MAPbI3 under compressive strain are also improved. The variations of the band gap under triaxial and biaxial strains are consistent within a certain range of strain, resulting from the fact that the band edge positions are mainly influenced by the Pb-I bond in the equatorial plane. Our results provide useful guidance for realizing the commercial applications of MAPbI3-based perovskite solar cells.
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Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of sub-bandgap electronic states that act as trap-mediated non-radiative recombination sites. However, the origin of the variations, trap states and extent of the defect tolerance remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. By combining scanning X-ray diffraction beamlines at two different synchrotrons with high-resolution transmission electron microscopy, we reveal levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). We find that local strain is associated with enhanced defect concentrations, and correlations between the local structure and time-resolved photoluminescence reveal that these strain-related defects are the cause of non-radiative recombination. We reveal a direct connection between defect concentrations and non-radiative losses, as well as complex heterogeneity across multiple length scales, shedding new light on the presence and influence of structural defects in halide perovskites.
The presence in the graphyne sheets of a variable amount of sp2/sp1 atoms, which can be transformed into sp3-like atoms by covalent binding with one or two fluorine atoms, respectively, allows one to assume the formation of fulorinated graphynes (fluorographynes) with variable F/C stoichiometry. Here, employing DFT band structure calculations, we examine a series of fluorographynes, and the trends in their stability, structural and electronic properties have been discussed as depending on their stoichiometry: from C2F3 (F/C= 1.5) to C4F7 (F/C= 1.75).
It is thought that growing large, oriented grains of perovskite can lead to more efficient devices. We study MAPbI3 films fabricated via Flash Infrared Annealing (FIRA) consisting of highly oriented, large grains. Domains observed in the SEM are often misidentified with crystallographic grains, but SEM images dont provide diffraction information. We measure the grain size, crystal structure and grain orientation using Electron Back-Scattered Diffraction (EBSD) and we study how these affect the optoelectronic properties as characterized by local photoluminescence (PL) and time-resolved microwave conductivity measurements (TRMC). We find a spherulitic growth yielding large (tens of micron), highly oriented grains along the (112) and (400) planes in contrast to randomly oriented, smaller (400 nm) grains observed in films fabricated via conventional antisolvent (AS) dripping. We observe a local enhancement and shift of the photoluminescence emission at different regions of the FIRA clusters, but these can be explained with a combination of light-outcoupling and self-absorption. We observe no effect of crystal orientation on the optoelectronic properties. Additionally, despite a substantial difference in grain size between our FIRA sample and a conventional AS sample, we find similar photoluminescence and charge carrier mobilities and lifetime for the two films. These findings show that the optoelectronic quality is not necessarily related to the orientation and size of crystalline domains in perovskite films indicating that fabrication requirements may be more relaxed for perovskites.
First-principles density functional calculations are performed to investigate the interplay between inplane strains and interface effects in 1by1 PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices of tetragonal symmetry. One particular emphasis of this study is to conduct side-by-side comparisons on various ferroelectric properties in short-period superlattices and in constituent bulk materials, which turns out to be rather useful in terms of obtaining valuable insight into the different physics when ferroelectric bulks form superlattices. The various properties that are studied in this work include the equilibrium structure, strain dependence of mixing energy, microscopic ferroelectric off-center displacements, macroscopic polarization, piezoelectric coeffcients, effective charges, and the recently formulated k-dependent polarization dispersion structure. The details of our findings are rather lengthy, and are summarized in Sec. IV.
Electronic, structural, vibrational and elastic properties of PaN have been studied both at ambient and high pressures, using first principles methods with several commonly used parameterizations of the exchange-correlation energy. The generalized gradient approximation (GGA) reproduces the ground state properties satisfactorily. Under pressure PaN is found to undergo a structural transition from NaCl to the R-3m structure near 58 GPa. The high pressure behavior of the acoustic phonon branch along the (1,0,0) and (1,1,0) directions, and the C44 elastic constant are anomalous, which signals the structural transition. With GGA exchange-correlation, a topological transition in the charge density occurs near the structural transition which may be regarded as a quantum phase transition, where the order parameter obeys a mean field scaling law. However, the topological transition is absent when other exchange-correlation functionals are invoked (local density approximation (LDA) and hybrid functional). Therefore, this constitutes an example of GGA and LDA leading to qualitatively different predictions, and it is of great interest to examine experimentally whether this topological transition occurs.
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