Topological Weyl semimetal WTe2 with large-scale film form has a promising prospect for new-generation spintronic devices. However, it remains a hard task to suppress the defect states in large-scale WTe2 films due to the chemical nature. Here, we significantly improve the crystalline quality and remove the Te vacancies in WTe2 films by post annealing. We observe the distinct Shubnikov-de Haas quantum oscillations in WTe2 films. The nontrivial Berry phase can be revealed by Landau fan diagram analysis. The Hall mobility of WTe2 films can reach 1245 cm2V-1s-1 and 1423 cm2V-1s-1 for holes and electrons with the carrier density of 5 * 10^19 cm^-3 and 2 * 10^19 cm^-3, respectively. Our work provides a feasible route to obtain high-quality Weyl semimetal films for the future topological quantum device applications.
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