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Register a new userGiant enhancement of critical current density at high field in superconducting (Li,Fe)OHFeSe films by Mn doping
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Critical current density (Jc) is one of the major limiting factors for high field applications of iron-based superconductors. Here, we report that Mn-ions are successfully incorporated into nontoxic superconducting (Li,Fe)OHFeSe films. Remarkably, the Jc is significantly enhanced from 0.03 to 0.32 MA/cm^2 under 33 T, and the vortex pinning force density monotonically increases up to 106 GN/m^3, which is the highest record so far among all iron-based superconductors. Our results demonstrate that Mn incorporation is an effective method to optimize the performance of (Li,Fe)OHFeSe films, offering a promising candidate for high-field applications.
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A relatively high critical temperature, Tc, approaching 40 K, places the recently-discovered superconductor magnesium diboride (MgB2) intermediate between the families of low- and copper-oxide-based high-temperature superconductors (HTS). Supercurrent flow in MgB2 is unhindered by grain boundaries, unlike the HTS materials. Thus, long polycrystalline MgB2 conductors may be easier to fabricate, and so could fill a potentially important niche of applications in the 20 to 30 K temperature range. However, one disadvantage of MgB2 is that in bulk material the critical current density, Jc, appears to drop more rapidly with increasing magnetic field than it does in the HTS phases. The magnitude and field dependence of Jc are related to the presence of structural defects that can pin the quantised magnetic vortices that permeate the material, and prevent them from moving under the action of the Lorentz force. Vortex studies suggest that it is the paucity of suitable defects in MgB2 that causes the rapid decay of Jc with field. Here we show that modest levels of atomic disorder, induced by proton irradiation, enhance the pinning, and so increase Jc significantly at high fields. We anticipate that chemical doping or mechanical processing should be capable of generating similar levels of disorder, and so achieve technologically-attractive performance in MgB2 by economically-viable routes.
The superconducting film of (Li1-xFex)OHFeSe is reported for the first time. The thin film exhibits a small in-plane crystal mosaic of 0.22 deg, in terms of the FWHM (full-width-at-half-maximum) of x-ray rocking curve, and an excellent out-of-plane orientation by x-ray phi-scan. Its bulk superconducting transition temperature (Tc) of 42.4 K is characterized by both zero electrical resistance and diamagnetization measurements. The upper critical field (Hc2) is estimated to be 79.5 T and 443 T, respectively, for the magnetic field perpendicular and parallel to the ab plane. Moreover, a large critical current density (Jc) of a value over 0.5 MA/cm2 is achieved at ~20 K. Such a (Li1-xFex)OHFeSe film is therefore not only important to the fundamental research for understanding the high-Tc mechanism, but also promising in the field of high-Tc superconductivity application, especially in high-performance electronic devices and large scientific facilities such as superconducting accelerator.
The mechanism of high temperature superconductivity in the iron-based superconductors remains an outstanding issue in condensed matter physics. The electronic structure, in particular the Fermi surface topology, is considered to play an essential role in dictating the superconductivity. Recent revelation of distinct electronic structure and possible high temperature superconductivity with a transition temperature Tc above 65 K in the single-layer FeSe films grown on the SrTiO3 substrate provides key information on the roles of Fermi surface topology and interface in inducing or enhancing superconductivity. Here we report high resolution angle-resolved photoemission measurement on the electronic structure and superconducting gap of a novel FeSe-based superconductor, (Li0.84Fe0.16)OHFe0.98Se, with a Tc at 41 K. We find that this single-phase bulk superconductor shows remarkably similar electronic behaviors to that of the superconducting single-layer FeSe/SrTiO3 film in terms of Fermi surface topology, band structure and nearly isotropic superconducting gap without nodes. These observations provide significant insights in understanding high temperature superconductivity in the single-layer FeSe/SrTiO3 film in particular, and the mechanism of superconductivity in the iron-based superconductors in general.
The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the reduced effective area argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.
We report measurements of the London penetration depth [$Deltalambda(T)$] of the recently discovered iron-based superconductor (Li$_{1-x}$Fe$_x$)OHFeSe, in order to characterize the nature of the superconducting gap structure. At low temperatures, $Deltalambda(T)$ displays nearly temperature independent behavior, indicating a fully open superconducting gap. We also analyze the superfluid density $rho_s(T)$ which cannot be well accounted for by a single-gap isotropic $s$-wave model but are consistent with either two-gaps, a model for the orbital selective $stimestau_3$ state or anisotropic $s$-wave superconductivity.
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