No Arabic abstract
Landau-level spectroscopy, the optical analysis of electrons in materials subject to a strong magnetic field, is a versatile probe of the electronic band structure and has been successfully used in the identification of novel states of matter such as Dirac electrons, topological materials or Weyl semimetals. The latter arise from a complex interplay between crystal symmetry, spin-orbit interaction and inverse ordering of electronic bands. Here, we report on unusual Landau-level transitions in the monopnictide TaP that decrease in energy with increasing magnetic field. We show that these transitions arise naturally at intermediate energies in time-reversal-invariant Weyl semimetals where the Weyl nodes are formed by a partially gapped nodal-loop in the band structure. We propose a simple theoretical model for electronic bands in these Weyl materials that captures the collected magneto-optical data to great extent.
Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.
The optical properties of (001)-oriented NbP single crystals have been studied in a wide spectral range from 6 meV to 3 eV from room temperature down to 10 K. The itinerant carriers lead to a Drude-like contribution to the optical response; we can further identify two pronounced phonon modes and interband transitions starting already at rather low frequencies. By comparing our experimental findings to the calculated interband optical conductivity, we can assign the features observed in the measured conductivity to certain interband transitions. In particular, we find that transitions between the electronic bands spilt by spin-orbit coupling dominate the interband conductivity of NbP below 100 meV. At low temperatures, the momentum-relaxing scattering rate of the itinerant carriers in NbP is very small, leading to macroscopic characteristic length scales of the momentum relaxation of approximately 0.5 $mu$m.
Weyl semimetals are extraordinary systems where exotic phenomena such as Fermi arcs, pseudo-gauge fields and quantum anomalies arise from topological band degeneracy in crystalline solids for electrons and metamaterials for photons and phonons. On the other hand, higher-order topological insulators unveil intriguing multidimensional topological physics beyond the conventional bulk-edge correspondences. However, it is unclear whether higher-order topology can emerge in Weyl semimetals. Here, we report the experimental discovery of higher-order Weyl semimetals in its phononic analog which exhibit topologically-protected boundary states in multiple dimensions. We create the physical realization of the higher-order Weyl semimetal in a chiral phononic crystal with uniaxial screw symmetry. Using near-field spectroscopies, we observe the chiral Fermi arcs on the surfaces and a new type of hinge arc states on the hinge boundaries. These topological boundary arc states link the projections of Weyl points in different dimensions and directions, and hence demonstrate higher-order multidimensional topological physics in Weyl semimetals. Our study establishes the fundamental connection between higher-order topology and Weyl physics in crystalline materials and unveils a new horizon of higher-order topological semimetals where unprecedented materials such as higher-order topological nodal-lines may emerge.
The magnetic-field dependence of optical reflectivity [$R(omega)$] and optical conductivity [$sigma(omega)$] spectra of the ideal type-I Weyl semimetal TaAs has been investigated at the temperature of 10 K in the terahertz (THz) and infrared (IR) regions. The obtained $sigma(omega)$ spectrum in the THz region of $hbaromegaleq15$ meV is strongly affected by the applied magnetic field ($B$): The Drude spectral weight is rapidly suppressed and an energy gap originating from the optical transition in the lowest Landau levels appears with a gap size that increases in proportion to $sqrt{B}$, which suggests linear band dispersions. The obtained THz $sigma(omega)$ spectra could be scaled not only in the energy scale by $sqrt{B}$ but also in the intensity by $1/sqrt{B}$ as predicted theoretically. In the IR region for $hbaromegageq17$ meV, on the other hand, the observed $R(omega)$ peaks originating from the optical transitions in higher Landau levels are proportional to linear-$B$ suggesting parabolic bands. The different band dispersions originate from the crossover from the Dirac to the free-electron bands.
We report 65 tesla magneto-absorption spectroscopy of exciton Rydberg states in the archetypal monolayer semiconductor WSe$_2$. The strongly field-dependent and distinct energy shifts of the 2s, 3s, and 4s excited neutral excitons permits their unambiguous identification and allows for quantitative comparison with leading theoretical models. Both the sizes (via low-field diamagnetic shifts) and the energies of the $ns$ exciton states agree remarkably well with detailed numerical simulations using the non-hydrogenic screened Keldysh potential for 2D semiconductors. Moreover, at the highest magnetic fields the nearly-linear diamagnetic shifts of the weakly-bound 3s and 4s excitons provide a direct experimental measure of the excitons reduced mass, $m_r = 0.20 pm 0.01~m_0$.