No Arabic abstract
Terahertz subwavelength imaging aims at developing THz microscopes able to resolve deeply subwavelength features. To improve the spatial resolution beyond the diffraction limit, a current trend is to use various subwavelength probes to convert the near-field to the far-field. These techniques, while offering significant gains in spatial resolution, inherently lack the ability to rapidly obtain THz images due to the necessity of slow pixel-by-pixel raster scan and often suffer from low light throughput. In parallel, in the visible spectral range, several super-resolution imaging techniques were developed that enhance the image resolution by recording and statistically correlating multiple images of an object backlit with light from stochastically blinking fluorophores. Inspired by this methodology, we develop a Super-resolution Orthogonal Deterministic Imaging (SODI) technique and apply it in the THz range. Since there are no natural THz fluorophores, we use optimally designed mask sets brought in proximity with the object as artificial fluorophores. Because we directly control the form of the masks, rather than relying on statistical averages, we aim at employing the smallest possible number of frames. After developing the theoretical basis of SODI, we demonstrate the second-order resolution improvement experimentally using phase masks and binary amplitude masks with only 8 frames. We then numerically show how to extend the SODI technique to higher orders to further improve the resolution. As our formulation is based on the equation of linear imaging and it uses spatial modulation of either the phase or the amplitude of the THz wave, our methodology can be readily adapted for the use with existing phase-sensitive single pixel imaging systems or any amplitude sensitive THz imaging arrays.
This work presents a new super-resolution imaging approach by using subwavelength hole resonances. We employ a subwavelength structure in which an array of tiny holes are etched in a metallic slab with the neighboring distance $ell$ that is smaller than half of the wavelength. By tuning the incident wave at resonant frequencies, the subwavelength structure generates strong illumination patterns that are able to probe both low and high spatial frequency components of the imaging sample sitting above the structure. The image of the sample is obtained by performing stable numerical reconstruction from the far-field measurement of the diffracted wave. It is demonstrated that a resolution of $ell/2$ can be obtained for reconstructed images, thus one can achieve super-resolution by arranging multiple holes within one wavelength. The proposed approach may find applications in wave-based imaging such as electromagnetic and ultrasound imaging. It attains two advantages that are important for practical realization. It avoids the difficulty to control the distance the between the probe and the sample surface with high precision. In addition, the numerical reconstructed images are very stable against noise by only using the low frequency band of the far-field data in the numerical reconstruction.
Inspired by the capability of structured illumination microscopy in subwavelength imaging, many researchers devoted themselves to investigating this methodology. However, due to the free propagating feature of the traditional structured illumination fields, the resolution can be only improved up to double times compared with the diffractied limited microscopy. Besides, most of the previous studies, relying on incoherent illumination sources, are restricted to fluorescent samples. In this work, a subwavelength nonfluorescent imaging method is proposed based on the terahertz traveling wave and plasmonics illumination. Excited along with a metal grating, the spoof surface plasmons are employed as the plasmonics illumination. When the scattering waves with the SSPs illumination are captured, the high order spatial frequency components of the sample are already encoded into the obtainable low order ones. Then, an algorithm is summarized to shift the modulated SF components to their actual positions in the Fourier domain. In this manner, high order SF components carrying the fine information are introduced to reconstruct the desired imaging, leading to an improvement of the resolution up to 0.12 lambda. Encouragingly, the resolution can be further enhanced by tuning the working frequency of the SSPs. This method holds promise for some important applications in terahertz nonfluorescent microscopy and sample detection with weak scattering.
Developing a chip-based super-resolution imaging technique with large field-of-view (FOV), deep subwavelength resolution, and compatibility for both fluorescent and non-fluorescent samples is desired for material science, biomedicine, and life researches, etc. Previous on-chip super-resolution methods focus on either fluorescent or non-fluorescent imaging, putting an urgent requirement on the general imaging technique compatible with both of them. Here, we introduce a universal super-resolution imaging method based on tunable virtual-wavevector spatial frequency shift (TVSFS), realizing both labeled and label-free super-resolution imaging on a single delicately fabricated scalable photonic chip. Theoretically, with TVSFS, the diffraction limit of a linear optical system can be overcome, and the resolution can be improved more than three times, which is the limitation for most super-resolution imaging based on spatial frequency engineering. Diffractive units were fabricated on the chips surface to provide a wavevector-variable evanescent wave illumination and induce tunable deep SFS in the samples Fourier space. A resolution of {lambda}/4.7 for the label-free sample and {lambda}/7.1 for the labeled sample with a large FOV could be achieved with a CMOS-compatible process on a GaP chip. The large FOV, high-compatibility, and high-integration TVSFS chip may advance the fields like cell engineering, precision inspection in the industry, chemical research, etc.
Super-resolution fluorescence microscopy is an important tool in biomedical research for its ability to discern features smaller than the diffraction limit. However, due to its difficult implementation and high cost, the universal application of super-resolution microscopy is not feasible. In this paper, we propose and demonstrate a new kind of super-resolution fluorescence microscopy that can be easily implemented and requires neither additional hardware nor complex post-processing. The microscopy is based on the principle of stepwise optical saturation (SOS), where $M$ steps of raw fluorescence images are linearly combined to generate an image with a $sqrt{M}$-fold increase in resolution compared with conventional diffraction-limited images. For example, linearly combining (scaling and subtracting) two images obtained at regular powers extends resolution by a factor of $1.4$ beyond the diffraction limit. The resolution improvement in SOS microscopy is theoretically infinite but practically is limited by the signal-to-noise ratio. We perform simulations and experimentally demonstrate super-resolution microscopy with both one-photon (confocal) and multiphoton excitation fluorescence. We show that with the multiphoton modality, the SOS microscopy can provide super-resolution imaging deep in scattering samples.
Modern scattering-type scanning near-field optical microscopy (s-SNOM) has become an indispensable tool in material research. However, as the s-SNOM technique marches into the far-infrared (IR) and terahertz (THz) regimes, emerging experiments sometimes produce puzzling results. For example, anomalies in the near-field optical contrast have been widely reported. In this Letter, we systematically investigate a series of extreme subwavelength metallic nanostructures via s-SNOM near-field imaging in the GHz to THz frequency range. We find that the near-field material contrast is greatly impacted by the lateral size of the nanostructure, while the spatial resolution is practically independent of it. The contrast is also strongly affected by the connectivity of the metallic structures to a larger metallic ground plane. The observed effect can be largely explained by a quasi-electrostatic analysis. We also compare the THz s-SNOM results to those of the mid-IR regime, where the size-dependence becomes significant only for smaller structures. Our results reveal that the quantitative analysis of the near-field optical material contrasts in the long-wavelength regime requires a careful assessment of the size and configuration of metallic (optically conductive) structures.