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Register a new userUnexpected hole doping of graphene by osmium adatoms
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The electronic transport of monolayer graphene devices is studied before and after emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-doping efficiency. The charge neutrality point of graphene is found to vary non-monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.
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Resonant graphene dopants, such as hydrogen adatoms, experience long-range effective interaction mediated by conduction electrons. As a result of this interaction, when several adatoms are present in the sample, hopping of adatoms between sites belonging to different sublattices involves significant energy changes. Different inelastic mechanisms facilitating such hopping -- coupling to phonons and conduction electrons -- are considered. It is estimated that the diffusion of hydrogen adatoms is rather slow, amounting to roughly one hop to a nearest neighbor per millisecond.
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