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Register a new userUniversal bottleneck for thermal relaxation in disordered metallic films
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We study the heat relaxation in current biased metallic films in the regime of strong electron-phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of voltage bias, in spite of the fact that all the dimensions of the film are large compared to the electron-phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron-phonon scattering rate. A preliminary experimental study of a 200 nm thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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The performance of low temperature detectors utilizing thermal effects is determined by their energy relaxation properties. Usually, heat transport experiments in mesoscopic structures are carried out in the steady-state, where temperature gradients do not change in time. Here, we present an experimental study of dynamic thermal relaxation in a mesoscopic system -- thin metallic film. We find that the thermal relaxation of hot electrons in copper and silver films is characterized by several time constants, and that the annealing of the films changes them. In most cases, two time constants are observed, and we can model the system by introducing an additional thermal reservoir coupled to the film electrons. We determine the specific heat of this reservoir and its coupling to the electrons. The experiments point at the importance of grain structure on the thermal relaxation of electrons in metallic films.
We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction of the charge conductivity by resonant impurity scattering. These findings can be exploited to create materials with high efficiency of charge to spin current conversion by strain engineering.
We compute the transient dynamics of phonons in contact with high energy hot charge carriers in 12 polar and non-polar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in electronic temperature departs significantly from a single-exponential model at times ranging from 1 ps to 15 ps after electronic excitation, a phenomenon concomitant with the appearance of non-thermal vibrational modes. We demonstrate that these effects result from the slow thermalization within the phonon subsystem, caused by the large heterogeneity in the timescales of electron-phonon and phonon-phonon interactions in these materials. We propose a generalized 2-temperature model accounting for the phonon thermalization as a limiting step of electron-phonon thermalization, which captures the full thermal relaxation of hot electrons and holes in semiconductors. A direct consequence of our findings is that, for semiconductors, information about the spectral distribution of electron-phonon and phonon-phonon coupling can be extracted from the multi-exponential behavior of the electronic temperature.
Magnetic skyrmions are topologically-distinct swirls of magnetic moments which display particle-like behaviour, including the ability to undergo thermally-driven diffusion. In this paper we study the thermally activated motion of arrays of skyrmions using temperature dependent micromagnetic simulations where the skyrmions form spontaneously. In particular, we study the interaction of skyrmions with grain boundaries, which are a typical feature of sputtered ultrathin films used in experimental devices. We find the interactions lead to two distinct regimes. For longer lag times the grains lead to a reduction in the diffusion coefficient, which is strongest for grain sizes similar to the skyrmion diameter. At shorter lag times the presence of grains enhances the effective diffusion coefficient due to the gyrotropic motion of the skyrmions induced by their interactions with grain boundaries. For grain sizes significantly larger than the skyrmion diameter clustering of the skyrmions occurs in grains with lower magnetic anisotropy.
An efficient order$-N$ real-space Kubo approach is developed for the calculation of the thermal conductivity of complex disordered materials. The method, which is based on the Chebyshev polynomial expansion of the time evolution operator and the Lanczos tridiagonalization scheme, efficiently treats the propagation of phonon wave-packets in real-space and the phonon diffusion coefficients. The mean free paths and the thermal conductance can be determined from the diffusion coefficients. These quantities can be extracted simultaneously for all frequencies, which is another advantage in comparison with the Greens function based approaches. Additionally, multiple scattering phenomena can be followed through the time dependence of the diffusion coefficient deep into the diffusive regime, and the onset of weak or strong phonon localization could possibly be revealed at low temperatures for thermal insulators. The accuracy of our computational scheme is demonstrated by comparing the calculated phonon mean free paths in isotope-disordered carbon nanotubes with Landauer simulations and analytical results. Then, the upscalibility of the method is illustrated by exploring the phonon mean free paths and the thermal conductance features of edge disordered graphene nanoribbons having widths of $sim$20 nanometers and lengths as long as a micrometer, which are beyond the reach of other numerical techniques. It is shown that, the phonon mean free paths of armchair nanoribbons are smaller than those of zigzag nanoribbons for the frequency range which dominate the thermal conductance at low temperatures. This computational strategy is applicable to higher dimensional systems, as well as to a wide range of materials.
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