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Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport

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 Added by Luca Banszerus
 Publication date 2019
  fields Physics
and research's language is English




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We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80 $mu$eV by the displacement field. We assign this gate-tunable subband-splitting to a gap induced by spin-orbit coupling of Kane-Mele type, enhanced by proximity effects due to the substrate. We show that this spin-orbit coupling gives rise to a complex pattern in low perpendicular magnetic fields, increasing the Zeeman splitting in one valley and suppressing it in the other one. In addition, we observe the existence of a spin-polarized channel of 6 e$^2$/h at high in-plane magnetic field and of signatures of interaction effects at the crossings of spin-split subbands of opposite spins at finite magnetic field.



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Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of spintronics or spin-based electronics is moving beyond effects based on local spin polarisation and is turning its attention to spin-orbit interaction (SOI) effects, which hold promise for the production, detection and manipulation of spin currents, allowing coherent transmission of information within a device. While SOI-induced spin transport effects have been observed in two- and three-dimensional samples, these have been subtle and elusive, often detected only indirectly in electrical transport or else with more sophisticated techniques. Here we present the first observation of a predicted spin-orbit gap in a one-dimensional sample, where counter-propagating spins, constituting a spin current, are accompanied by a clear signal in the easily-measured linear conductance of the system.
We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance strongly depends on the angle between the two graphene layers and identify three qualitatively different regimes. For large angles ($theta gtrsim 10^{circ}$) there are strong commensurability effects for incommensurate angles the low energy conductance approaches that of two disconnected layers, while sharp conductance features correlate with commensurate angles with small unit cells. For intermediate angles ($3^{circ}lesssim theta lesssim 10^{circ}$), we find a one-to-one correspondence between certain conductance features and the twist-dependent Van Hove singularities arising at low energies, suggesting conductance measurements can be used to determine the twist angle. For small twist angles ($1^{circ}lesssimthetalesssim 3^{circ}$), commensurate effects seem to be washed out and the conductance becomes a smooth function of the angle. In this regime, conductance can be used to probe the narrow bands, with vanishing conductance regions corresponding to spectral gaps in the density of states, in agreement with recent experimental findings.
We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10.
We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$Omega$s in the high carrier density regime to several M$Omega$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $ u=2$ followed by $ u=1$ suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic field indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both, the transport gap and $B$ field response point toward spin polarized layer antiferromagnetic state as a ground state in the bilayer graphene sample. The observed non-trivial dependence of the gap value on the normal component of $B$ suggests possible exchange mechanisms in the system.
A general form of the Hamiltonian for electrons confined to a curved one-dimensional (1D) channel with spin-orbit coupling (SOC) linear in momentum is rederived and is applied to a U-shaped channel. Discretizing the derived continuous 1D Hamiltonian to a tight-binding version, the Landauer-Keldysh formalism (LKF) for nonequilibrium transport can be applied. Spin transport through the U-channel based on the LKF is compared with previous quantum mechanical approaches. The role of a curvature-induced geometric potential which was previously neglected in the literature of the ring issue is also revisited. Transport regimes between nonadiabatic, corresponding to weak SOC or sharp turn, and adiabatic, corresponding to strong SOC or smooth turn, is discussed. Based on the LKF, interesting charge and spin transport properties are further revealed. For the charge transport, the interplay between the Rashba and the linear Dresselhaus (001) SOCs leads to an additional modulation to the local charge density in the half-ring part of the U-channel, which is shown to originate from the angle-dependent spin-orbit potential. For the spin transport, theoretically predicted eigenstates of the Rashba rings, Dresselhaus rings, and the persistent spin-helix state are numerically tested by the present quantum transport calculation.
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