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Register a new userComprehensive Control of Metamagnetic Transition of Antiferromagnetic Mott Insulator Sr2IrO4 by in-situ Anisotropic Strain
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Metamagnetism in antiferromagnets exhibits distinct critical behaviors and dynamics when invoking spin reversal and rotation. Here we show a 0.05% anisotropic strain suffices to in-situ modulate the metamagnetic critical field of the Mott insulator Sr2IrO4 by over 50%, enabling electrical switching of the transition. Resonant x-ray scattering and model simulation reveal that the transition is completely tuned from the spin-flop to spin-flip type as the strain introduces C4-symmetry-breaking magnetic anisotropy. Simultaneous transport study indicates the metamagnetic responses are reflected in the large elasto- and magnetoconductance, highlighting the active charge degree of freedom in the spin-orbit-coupled Mott state and its potential for spin-electronics.
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We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant X-ray scattering experiments, we observed an antiferromagnetic order in the orthorhombic Sr2IrO4 film whose interlayer stacking pattern is inverted from that of the tetragonal Sr2IrO4 crystal. This interlayer stacking is similar to that of the orthorhombic La2CuO4, implying that the asymmetric interlayer exchange interaction along a and b-directions exceeds the anisotropic interlayer pseudo-dipolar interaction. Our result suggests that strain-induced distortion can provide a delicate knob for tuning the long-range magnetic order in quasi-two-dimensional systems by evoking the competition between the interlayer exchange coupling and the pseudo-dipolar interaction.
Our magnetic, electrical, and thermal measurements on single-crystals of the novel Mott insulator, Sr2IrO4, reveal a novel giant magneto-electric effect (GME) arising from a frustrated magnetic/ferroelectric state whose signatures are: (1) a strongly enhanced electric permittivity that peaks near a newly observed magnetic anomaly at 100 K, (2) a large (~100%) magneto-dielectric shift that occurs near a metamagnetic transition, and (3) magnetic and electric polarization hysteresis. The GME and electric polarization hinge on a spin-orbit gapping of 5d-bands, rather than the magnitude and spatial dependence of magnetization, as traditionally accepted.
Spin-orbit entangled magnetic dipoles, often referred to as pseudospins, provide a new avenue to explore novel magnetism inconceivable in the weak spin-orbit coupling limit, but the nature of their low-energy interactions remains to be understood. We present a comprehensive study of the static magnetism and low-energy pseudospin dynamics in the archetypal spin-orbit Mott insulator Sr2IrO4. We find that in order to understand even basic magnetization measurements, a formerly overlooked in-plane anisotropy is fundamental. In addition to magnetometry, we use neutron diffraction, inelastic neutron scattering and resonant elastic and inelastic x-ray scattering to identify and quantify the interactions that determine the global symmetry of the system and govern the linear responses of pseudospins to external magnetic felds and their low-energy dynamics. We find that a pseudospin-only Hamiltonian is insufficient for an accurate description of the magnetism in Sr2IrO4 and that pseudospin-lattice coupling is essential. This finding should be generally applicable to other pseudospin systems with sizable orbital moments sensitive to anisotropic crystalline environments.
We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of MR shows a crossover from four-fold to two-fold symmetry in response to an increasing magnetic field with angular variations in resistance from 1-14%. We tentatively attribute the four-fold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of AFM-coupled moments in Sr2IrO4. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys/oxides (0.1-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also better harness the power of spintronics in a more technically favorable fashion.
We studied the in-plane dynamic and static charge conductivity of electron doped Sr2IrO4 using optical spectroscopy and DC transport measurements. The optical conductivity indicates that the pristine material is an indirect semiconductor with a direct Mott-gap of 0.55 eV. Upon substitution of 2% La per formula unit the Mott-gap is suppressed except in a small fraction of the material (15%) where the gap survives, and overall the material remains insulating. Instead of a zero energy mode (or Drude peak) we observe a soft collective mode (SCM) with a broad maximum at 40 meV. Doping to 10% increases the strength of the SCM, and a zero-energy mode occurs together with metallic DC conductivity. Further increase of the La substitution doesnt change the spectral weight integral up to 3 eV. It does however result in a transfer of the SCM spectral weight to the zero-energy mode, with a corresponding reduction of the DC resistivity for all temperatures from 4 to 300 K. The presence of a zero-energy mode signals that at least part of the Fermi surface remains ungapped at low temperatures, whereas the SCM appears to be caused by pinning a collective frozen state involving part of the doped electrons.
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