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Register a new userExperimental evidence of crystal symmetry protection for the topological nodal line semimetal state in ZrSiS
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Tunable symmetry breaking plays a crucial role for the manipulation of topological phases of quantum matter. Here, through combined high-pressure magneto-transport measurements, Raman spectroscopy, and X-ray diffraction, we demonstrate a pressure-induced topological phase transition in nodal-line semimetal ZrSiS. Symmetry analysis and first-principles calculations suggest that this pressure-induced topological phase transition may be attributed to weak lattice distortions by non-hydrostatic compression, which breaks some crystal symmetries, such as the mirror and inversion symmetries. This finding provides some experimental evidence for crystal symmetry protection for the topological semimetal state, which is at the heart of topological relativistic fermion physics.
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ZrSiS is the most intensively studied topological nodal-line semimetal candidate, which is proposed to host multiple nodal lines in its bulk electronic structure. However, previous angle-resolved photoemission spectroscopy (ARPES) experiments with vacuum ultraviolet lights mainly probed the surface states. Here using bulk-sensitive soft X-ray ARPES, we acquire the bulk electronic states of ZrSiS without any interference from surface states. Our results clearly show two groups of three-dimensional bulk nodal lines located on high-symmetry planes and along high-symmetry lines in the bulk Brillouin zone, respectively. The nodal lines on high-symmetry planes are enforced to pin at the Fermi level by carrier compensation and constitute the whole Fermi surfaces. This means that the carriers in ZrSiS are entirely contributed by nodal-line fermions, suggesting that ZrSiS is a remarkable platform for studying physical properties related to nodal lines.
Topological materials provide an exclusive platform to study the dynamics of relativistic particles in table-top experiments and offer the possibility of wide-scale technological applications. ZrSiS is a newly discovered topological nodal-line semimetal and has drawn enormous interests. In this report, we have investigated the lattice dynamics and electron-phonon interaction in single crystalline ZrSiS using Raman spectroscopy. Polarization and angle resolved measurements have been performed and the results have been analyzed using crystal symmetries and theoretically calculated atomic vibrational patterns along with phonon dispersion spectra. Wavelength and temperature dependent measurements show the complex interplay of electron and phonon degrees of freedom, resulting in resonant phonon and quasielastic electron scatterings through inter-band transitions. Our high-pressure Raman studies reveal vibrational anomalies, which were further investigated from the high-pressure synchrotron x-ray diffraction (HPXRD) spectra. From HPXRD, we have clearly identified pressure-induced structural transitions and coexistence of multiple phases, which also indicate possible electronic topological transitions in ZrSiS. The present study not only provides the fundamental information on the phonon subsystem, but also sheds some light in understanding the topological nodal-line phase in ZrSiS and other iso-structural systems.
We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has recently revealed an intriguing butterfly-shaped in-plane AMR that is not well understood. Our measurements of the polar out-of-plane AMR show a surprisingly different response with a pronounced cusp-like feature. The maximum of the cusp-like anisotropy is reached when the magnetic field is oriented in the $a$-$b$ plane. Moreover, the AMR for the azimuthal out-of-plane current direction exhibits a very strong four-fold $a$-$b$ plane anisotropy. Combining the Fermi surfaces calculated from first principles with the Boltzmanns semiclassical transport theory we reproduce and explain all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR. We are also able to clarify the origin of the strong non-saturating transverse magnetoresistance as an effect of imperfect charge-carrier compensation and open orbits. Finally, by combining our theoretical model and experimental data we estimate the average relaxation time of $2.6times10^{-14}$~s and the mean free path of $15$~nm at 1.8~K in our samples of ZrSiS.
Topological materials host fascinating low dimensional gapless states at the boundary. As a prominent example, helical topological edge states (TESs) of two-dimensional topological insulators (2DTIs) and their stacked three-dimensional (3D) equivalent, weak topological insulators (WTIs), have sparked research enthusiasm due to their potential application in the next generation of electronics/spintronics with low dissipation. Here, we propose layered superconducting material CaSn as a WTI with nontrivial Z2 as well as nodal line semimetal protected by crystalline non-symmorphic symmetry. Our systematic angle-resolved photoemission spectroscopy (ARPES) investigation on the electronic structure exhibits excellent agreement with the calculation. Furthermore, scanning tunnelling microscopy/spectroscopy (STM/STS) at the surface step edge shows signatures of the expected TES. These integrated evidences from ARPES, STM/STS measurement and corresponding ab initio calculation strongly support the existence of TES in the non-symmorphic nodal line semimetal CaSn, which may become a versatile material platform to realize multiple exotic electronic states as well as topological superconductivity.
The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate the macroscopic physical properties. Although the material realization of nodal line semimetals have been theoretically predicted in numerous compounds, only a few of them have been experimentally verified and the realization of a genuine nodal line semimetal is particularly rare. Here we report the realization of a genuine nodal line semimetal in LaSbTe. We investigated the electronic structure of LaSbTe by band structure calculations and angle-resolved photoemission (ARPES) measurements. Taking spin-orbit coupling into account, our band structure calculations predict that a nodal line is formed in the boundary surface of the Brillouin zone which is robust and lies close to the Fermi level. The Dirac nodes along the X-R line in momentum space are directly observed in our ARPES measurements and the energies of these Dirac nodes are all close to the Fermi level. These results constitute clear evidence that LaSbTe is a genuine nodal line semimetal,providing a new platform to explore for novel phenomena and possible applications associated with the nodal line semimetals.
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