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Register a new userTailored Graphenic Structures Directly Grown on Titanium Oxide Boost the Interfacial Charge Transfer
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Added by
Roberto Mu\\~noz G\\'omez
Publication date
2019
fields
Physics
and research's language is
English
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The successful application of titanium oxide-graphene hybrids in the fields of photocatalysis, photovoltaics and photodetection strongly depends on the interfacial contact between both materials. The need to provide a good coupling between the enabling conductor and the photoactive phase prompted us to directly grow conducting graphenic structures on TiO2 crystals. We here report on the direct synthesis of tailored graphenic structures by using Plasma Assisted Chemical Vapour Deposition that present a clean junction with the prototypical titanium oxide (110) surface. Chemical analysis of the interface indicates chemical bonding between both materials. Photocurrent measurements under UV light illumination manifest that the charge transfer across the interface is efficient. Moreover, the influence of the synthesis atmosphere, gas precursor (C2H2) and diluents (Ar, O2), on the interface and on the structure of the as-grown graphenic material is assessed. The inclusion of O2 promotes vertical growth of partially oxidized carbon nanodots/rods with controllable height and density. The deposition with Ar results in continuous graphenic films with low resistivity (6.8x10-6 ohm x m). The synthesis protocols developed here are suitable to produce tailored carbon-semiconductor structures on a variety of practical substrates as thin films, pillars or nanoparticles.
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In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a significant inversion charge-boost can be achieved by a FE MOS capacitor due to a steep transient subthreshold swing (SS) driven by the free charge-polarization mismatch. It is also shown that the observation of steep transient SS significantly depends on the viscosity coefficient under Landaus mean field theory, in general representing the average FE time response associated with domain nucleation and propagation. Therefore, this letter not only establishes a theoretical framework that describes the physical origin behind the inversion charge-boost in a FE MOS capacitor, but also shows that the key feature of depolarization effect on a FE MOS capacitor should be the inversion-charge boost, rather than the steep SS (e.g., sub-60mV/dec at room temperature), which cannot be experimentally observed as the measurement time is much longer than the FE response. Finally, we outlines the required material targets for the FE response in field-effect transistors to be applicable for next-generation high-speed and low-power digital switches.
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning, preventing parallel programming of ANN arrays as needed to surpass conventional computing efficiency. Electrochemical random-access memories (ECRAMs), where resistive switching occurs by ion insertion into a redox-active channel address these challenges due to their linear switching and low noise. ECRAMs using two-dimensional (2D) materials and metal oxides suffer from slow ion kinetics, whereas organic ECRAMs enable high-speed operation but face significant challenges towards on-chip integration due to poor temperature stability of polymers. Here, we demonstrate ECRAMs using 2D titanium carbide (Ti3C2Tx) MXene that combines the high speed of organics and the integration compatibility of inorganic materials in a single high-performance device. Our ECRAMs combine the speed, linearity, write noise, switching energy and endurance metrics essential for parallel acceleration of ANNs, and importantly, they are stable after heat treatment needed for back-end-of-line integration with Si electronics. The high speed and performance of these ECRAMs introduces MXenes, a large family of 2D carbides and nitrides with more than 30 compositions synthesized to date, as very promising candidates for devices operating at the nexus of electrochemistry and electronics.
We report on low-temperature MOVPE growth of silicon delta-doped b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 {deg}C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any significant observable degradation in crystal quality of the delta sheet and surrounding regions. Hall measurements of delta-doped film on Fe-doped substrate showed a sheet charge density of 6.1 x 1012 cm-2 and carrier mobility of 83 cm2/V. s. Realization of sharp delta doping profiles in MOVPE-grown b{eta}-Ga2O3 is promising for high performance device applications.
The titanium fire as produced during high pressure and friction is the major failure scenario for aero-engines. To alleviate this issue, Ti-V-Cr and Ti-Cu-Al series burn resistant titanium alloys have been developed. However, which burn resistant alloy exhibit better property with reasonable cost needs to be evaluated. This work unveils the burning mechanisms of these alloys and discusses whether burn resistance of Cr and V can be replaced by Cu, on which thorough exploration is lacking. Two representative burn resistant alloys are considered, including Ti14(Ti-13Cu-1Al-0.2Si) and Ti40(Ti-25V-15Cr-0.2Si)alloys. Compared with the commercial non-burn resistant titanium alloy, i.e., TC4(Ti-6Al-4V)alloy, it has been found that both Ti14 and Ti40 alloys form protective shields during the burning process. Specifically, for Ti14 alloy, a clear Cu-rich layer is formed at the interface between burning product zone and heat affected zone, which consumes oxygen by producing Cu-O compounds and impedes the reaction with Ti-matrix. This work has established a fundamental understanding of burning resistant mechanisms for titanium alloys. Importantly, it is found that Cu could endow titanium alloys with similar burn resistant capability as that of V or Cr, which opens a cost-effective avenue to design burn resistant titanium alloys.
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